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991.
Talpes E. Marculescu D. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2005,13(1):14-26
This paper investigates a possible solution to the problem of power consumption in superscalar, out-of-order processors by proposing a new microarchitecture, specifically designed to reduce increasing power requirements of high-end processors. More precisely, we show that by modifying the well-established superscalar processor architecture, significant savings can be achieved in terms of power consumption. Our approach aims at limiting the growing amount of power used in a typical processor for dynamic optimizations (including out-of-order scheduling and register renaming). Our proposed approach achieves significant power savings by reusing as much as possible from the work done by the front-end of a typical superscalar, out-of-order pipeline, via the use of a special cache nested deeply into the processor structure. By reusing instructions that are already decoded, reordered, and have their registers already renamed, the front end of the pipeline can be turned off for large periods of time with significant savings in the overall power consumption. Experimental results show up to 35% (30% on average) savings in average energy per committed instruction, and 35% (20% on average) savings in energy-delay product, with about 9% average performance loss, over a large spectrum of SPEC95 and SPEC2000 benchmarks. 相似文献
992.
Andre C.L. Carlin J.A. Boeckl J.J. Wilt D.M. Smith M.A. Pitera A.J. Lee M.L. Fitzgerald E.A. Ringel S.A. 《Electron Devices, IEEE Transactions on》2005,52(6):1055-1060
High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers. 相似文献
993.
G. Lucovsky J.G. Hong C.C. Fulton N.A. Stoute Y. Zou R.J. Nemanich D.E. Aspnes H. Ade D.G. Schlom 《Microelectronics Reliability》2005,45(5-6):827
This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices. 相似文献
994.
995.
Dinesh Topwal U. Manju Sugata Ray S. Raj D. D. Sarma S. R. Krishnakumar M. Bertolo S. La Rosa G. Cautero 《Journal of Chemical Sciences》2006,118(1):87-92
Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function
of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of
such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish
that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is
responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with
composition fluctuations of the type Sr2Fe1+x
Mo1-x
O6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.
Dedicated to Prof J Gopalakrishnan on his 62nd birthday. 相似文献
996.
da Costa D.B. Yacoub M.D. Filho J.C.S.S. Fraidenraich G. Mendes J.R. 《Communications Letters, IEEE》2006,10(1):13-15
This paper provides simple, exact, new closed-form expressions for the generalized phase crossing rate of Nakagami-m fading channels. Sample numerical results obtained by simulation are presented that validate the formulations developed here. A special case of this formulation is the Rayleigh case, whose result agrees with that obtained elsewhere in the literature. In passing, several new closed-form results concerning the statistics of the envelope, its in-phase and quadrature components, phase, and their time derivatives are obtained. 相似文献
997.
T. S. Shamirzaev A. I. Toropov A. K. Bakarov K. S. Zhuravlev A. Yu. Kobitski H. P. Wagner D. R. T. Zahn 《Semiconductors》2006,40(5):527-533
The stationary and time-resolved polariton radiation in ultrahigh quality AIGaAs layers have been studied. It has been found
that elastic exciton-exciton collisions lead to the appearance of a low-energy line of polariton radiation. We show that the
rate of exciton-to-polariton transitions caused by elastic exciton-exciton collisions is determined not only by the density
of the excitonic gas, but also by its temperature; this is in accordance with existing theoretical predictions.
The text was submitted by the authors in English. 相似文献
998.
Chen Q. Hong Y. Chen G. Hill D. J. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(12):2692-2704
In this paper, one kind of intermittency generated by a discontinuous system is studied. Although this system, which is composed of two switched subsystems coupled with a high strength, is nonsmooth, the mechanism of this kind of intermittency can be analyzed with several explicit relations between the intermittency characteristics and the system control parameters. In particular, estimates of "steady-state" values of the system (in the laminar phases) and a critical value for this intermittency can be derived, which are helpful in relevant control systems design. Moreover, some power laws for the observed intermittency are obtained and discussed 相似文献
999.
Summary Vezetéknév 相似文献
1000.
The goal of this letter is to present a model to compute a quality-of-service (QoS) index to characterize IP services. Then, we show how such a score may be used in a clear and flexible way for defining advanced usage-based tariff criteria to charge QoS guaranteed network services to address the dynamics of the expected future telecommunications scenario. 相似文献