Cortical implants for the blind

Arrays of stimulating electrodes can be placed in the brain itself, in the visual cortex, to bring vision to the profoundly blind. However, when designing such devices one needs to take into consideration the fact that the visual pathway maps images onto cortical structures in a complex and unpredictable way     

Silicon-substrate microelectrode arrays for parallel recording ofneural activity in peripheral and cranial nerves

A new process for the fabrication of regeneration microelectrode arrays for peripheral and cranial nerve applications is presented. This type of array is implanted between the severed ends of nerves, the axons of which regenerate through via holes in the silicon and are thereafter held fixed with respect to the microelectrodes. The process described is designed for compatibility with industry-standard CMOS or BiCMOS processes (it does not involve high-temperature process steps nor heavily-doped etch-stop layers), and provides a thin membrane for the via holes, surrounded by a thick silicon supporting rim. Many basic questions remain regarding the optimum via hole and microelectrode geometries in terms of both biological and electrical performance of the implants, and therefore passive versions were fabricated as tools for addressing these issues in on-going work. Versions of the devices were implanted in the rat peroneal nerve and in the frog auditory nerve. In both cases, regeneration was verified histologically and it was observed that the regenerated nerves had reorganized into microfascicles containing both myelinated and unmyelinated axons and corresponding to the grid pattern of the via holes. These microelectrode arrays were shown to allow the recording of action potential signals in both the peripheral and cranial nerve settings, from several microelectrodes in parallel     

Airborne scatterometers: investigating ocean backscatter under low and high-wind conditions

Attempting to understand and predict weather on a local and global basis has challenged both the scientific and engineering communities. One key parameter in understanding the weather is the ocean surface wind vector because of its role in the energy exchange at the air-sea surface. scatterometers, radars that measure the reflectivity of a target offer a tool with which to remotely monitor these winds from tower-, aircraft-, and satellite-based platforms. This paper introduces three current airborne scatterometer systems, and presents data collected by these instruments under low-, moderate-, and high-wind conditions. The paper focuses on airborne scatterometers because of their ability to resolve submesoscale variations in wind fields. Discrepancies between existing theory and the observations are noted and the concerns in measuring low-wind speeds discussed. Finally, the application of using this technology for estimating the surface-wind vector during a hurricane is demonstrated     

Demonstration of a semiconductor external cavity laser using a UVwritten grating in a planar silica waveguide

The authors report the first demonstration of a semiconductor external cavity waveguide laser, modulated at 2.5 Gbit/s over 100 km of standard optical fibre using a UV written grating in a planar silica waveguide as the feedback element     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

Mine operating accurate stability control with optical fibersensing and Bragg grating technology: the European BRITE/EURAM STABILOSproject

Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices     

A soft switching active snubber optimized for IGBT's in singleswitch unity power factor three-phase diode rectifiers

This paper describes a soft switching active snubber for an IGBT operating in a single switch unity power factor three-phase diode rectifier. The soft switching snubber circuit provides zero-voltage turn-off for the main switch. The high turn-off losses of the IGBT due to current tailing are reduced by zero-voltage switching. This allows the circuit to be operated at very high switching frequencies with regulated DC output voltage, high quality input current and unity input power factor. Simulation and experimental results are included