准分子激光器异步感应密封传动技术

一种新型准分子激光器循环系统中的密封传动技术，具有可耐高气压，不失耦，不使用昂贵强磁材料，结构简单等优点，虽有涡流损失过大之不足，但能很好地适用于小功率下运行。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

自发参量下转换光场的实验研究进展综述

自发参量下转换(spontaneous parametric down-conversion,SPDC)光场是基于单色泵浦光子流和量子真空噪声对非线性晶体的综合作用而产生的,它固有的量子起源决定了在非经典光场研究中的重要地位和作用.对SPDC光场的相干特性和它在绝对测量光电探测器量子效率中的应用进行了深入而细致的研究和探讨.     

开关电源的噪声及其抑制

介绍开关电源的常态噪声和共态噪声产生的原因，以及几种抑制噪声的方法。     

基于OTA的多功能电压模滤波器及其仿真

本文采用信号流图法设计了一种基于ＯＴＡ的三输入一输出多功能电压模滤波器新电路，该电路由五个ＯＴＡ和两个接地电容构成，合理选择输入电压可实现低通、高通、带通、带阻及全通滤波功能。文章还对电路进行了ＭＯＳ管级的计算机仿真，其结果表明所提出的电路方案正确有效。     

薄相屏闪烁的数值分析

本文在弱闪烁条件下，利用广泛适用于星际闪烁、行星际闪烁和电离层闪烁的薄相屏理论，以行星际闪烁为算例，对薄相屏闪烁进行了数值分析。结果表明：垂直于介质运动方向上的不规则结构的大小对闪烁有着重要的影响，直接表现在频谱的变化趋势和振荡幅度的不同。尤其是当小于Ｆｒｅｓｎｅｌ尺度时，数值计算表明此时没有闪烁发生。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

Copper-D-penicillamine complex as potential contrast agent for MRI.

In vitro and in vivo proton T1 data are reported that demonstrate that the paramagnetic copper-D-penicillamine complex can be applied as a potential contrast agent to magnetic resonance imaging.