Hot-carrier aging of the MOS transistor in the presence of spin-onglass as the interlevel dielectric

The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit on the hot-carrier aging of the MOS transistor is discussed. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. a correlation was found for the hot-carrier aging rate and the amount of absorbed water     

Reaction Medium and Kinetics of N-Vinylsuccinimide Copolymerization

Studies in the field of radical copolymerization of N-vinylsuccinimide were summarized, theeffect of the reaction medium on the process kinetics was examined. Factors governing the relative activity ofthe monomers were revealed, and ways to control the reactivity of N-vinylsuccinimide in binary copolymerizations were suggested.     

A novel soft-switching full-bridge DC/DC converter: analysis,design considerations, and experimental results at 1.5 kW, 100 kHz

The addition of an external commutating inductor and two clamp diodes to the phase-shifted PWM (pulsewidth modulated) full-bridge DC/DC converter substantially reduces the switching losses of the transistors and the rectifier diodes, under all loading conditions. The authors give analyses, practical design considerations, and experimental results for a 1.5 kW converter with 60 V, 25 A output, operating at 100 kHz clock frequency and 95% efficiency     

New methods for proving the existence and stability of periodic solutions in singularly perturbed delay systems

We carry out a detailed analysis of the existence, asymptotics, and stability problems for periodic solutions that bifurcate from the zero equilibrium state in systems with large delay. The account is based on a specific meaningful example given by a certain scalar nonlinear second-order differential-difference equation that is a mathematical model of a single-circuit RCL oscillator with delay in a feedback loop.     

The free Malcev superalgebra on one odd generator and related superalgebras

A base of the universal multiplicative envelope of the free Malcev superalgebra ℳ on one odd generator is constructed. Some corollaries for skew-symmetric functions and central elements in free Malcev and free alternative algebras are obtained. Moreover, a base of the Poisson-Malcev superalgebra of ℳ is constructed. As a corollary, a set of elements that spans the free alternative superalgebra on one odd generator is obtained. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 10, No. 4, pp. 97–106, 2004.     

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶–10⁸ cm^?2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶–10⁸ cm^?2. It is also found that some deep electron and hole traps are related to dislocations.     

Study of Fe/Si magnetic layered nanostructures by reflected electron energy loss spectroscopy

The results of studying Fe/Si and Si/Fe layered structures with different thicknesses of the top layer by reflected electron energy loss spectroscopy are presented. A new method is proposed for the estimation of volume fractions of components in binary systems within the framework of the effective dielectric medium model.