Error monitoring issues for common channel signaling

Motivated by field data which showed a large number of link changeovers and incidences of link oscillations between in-service and out-of-service states in common channel signalling (CCS) networks, a number of analyses of the link error monitoring procedures in the SS7 protocol were performed by the authors. This paper summarizes the results obtained thus far and include the following: (a) results of an exact analysis of the performance of the error monitoring procedures under both random and bursty errors; (b) a demonstration that there exists a range of error rates within which the error monitoring procedures of SS7 may induce frequent changeovers and changebacks; (c) an analysis of the performance of the SS7 level-2 transmission protocol to determine the tolerable error rates within which the delay requirements can be met; (d) a demonstration that the tolerable error rate depends strongly on various link and traffic characteristics, thereby implying that a single set of error monitor parameters will not work well in all situations; and (e) some recommendations on a customizable/adaptable scheme of error monitoring with a discussion on their implementability. These issues may be particularly relevant in the presence of anticipated increases in SS7 traffic due to widespread deployment of advanced intelligent network (AIN) and personal communications service (PCS) as well as for developing procedures for high-speed SS7 links currently under consideration by standards bodies     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Performance of trellis coded-8PSK with cochannel interference

The performance of trellis coded-8PSK in the presence of cochannel interference is analyzed and compared with the performance of uncoded QPSK. The analytical expressions are derived and supported by simulating the bit error rate performance of different TC-8PSK systems. The analytical and simulation results show that TC-8PSK is slightly more robust to cochannel interference than uncoded QPSK     

YAG脉冲激光器快速连通保护系统

本文阐述了ＹＡＧ脉冲激光器的一种快速连通保护系统，利用大功率二极管作为连通故障信号检出的关键元件，采用了可控硅与继电器双重保护，使得整个保护系统既快速可靠，又简便适用。     

MNLS inverse discriminates between neuronal activity on oppositewalls of a simulated sulcus of the brain

The minimum-norm least-squares (MNLS) inverse for magnetic field measurements is applied to a representation of a sulcus of the human brain, where one or both walls have regions of neuronal activity. Simulations indicate that the magnetic source image (MSI) is largely confined to the appropriate wall of the sulcus, even for a depth of 4 cm where the distance between walls is only 3 mm. Two nearly oppositely oriented dipoles located 3 mm apart are found to be distinguished. Influences on the quality of the MSI by measurement noise and inaccuracy in determining the image surface are discussed in detail     

An FDTD/ray-tracing analysis method for wave penetration through inhomogeneous walls

A novel method of studying wave penetration through inhomogeneous walls using the hybrid technique based on combining finite-difference time-domain (FDTD) and ray tracing methods is presented . The FDTD method is used to analyze the transmission characteristics of inhomogeneous walls. Using the knowledge of the tangential electric and magnetic field distributions along the borders of the FDTD computation domain, rays are sent out to cover the rest of the environment so that prediction of signal coverage can be made more efficiently without compromising the accuracy. Numerical results of the method have been compared and shown to agree very well with those of measurement and those of full wave analysis. Examples have shown the inadequacy of the traditional ray tracing method in the presence of walls made of concrete blocks. However, the proposed method can accurately predict signal coverage by taking into account the scattered fields by the inhomogeneity inside the walls. The method does not add much to computational complexity. Reduction in computation time is even more significant when the incident waves can be approximated to be plane waves and the wall structure is periodic.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

一类含有非线性传染率的传染病模型的全局稳定性

讨论了一类带有非线性传染率的SIRS型传染病模型,得到了无病平衡点和地方病平衡点存在的阈值条件,借助构造Dulac函数和Liapunov函数,找到了两类平衡点全局渐近稳定的充要条件.     

HfOxNy的场发射特性

用直流溅射和高温退火相结合的方法制备了HfOxNy薄膜并测试了其场发射性能,发现其具有较低的开启电场、较大的发射电流密度以及很好的发射稳定性.高压"锻炼"对提高HfOxNy场发射性能起着关键作用,这与高压"锻炼"下薄膜内部结构和表面性质的改变有关.对场发射机理的研究表明,HfOxNy的场发射符合经典的FN隧穿理论.