Performance analysis of an improved MMSE multiuser receiver formismatched delay channels

Motivated by the fact that time delays in a practical direct-sequence code-division multiple-access (DS-CDMA) system can never be perfectly estimated, an improved minimum-mean squared-error (MMSE)-based receiver is proposed and analyzed. Via the simple assumption of a probability distribution for the delay estimation errors, the proposed receiver can achieve a performance superior to that of the conventional MMSE (CMMSE) receiver. The performances of this improved receiver and the CMMSE receiver are compared in terms of the mean squared error (MSE), probability of error, and asymptotic multiuser efficiency (AME). As the original definition of AME does not consider mismatched channels, the behavior of three single-user receivers bearing imperfect delay estimation is also investigated. These single-user receivers are employed to define a more appropriate AME. Finally, an efficient update mechanism to accommodate dynamic channel statistics, and thus practical implementation, is proposed     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

On the Zero-Energy-Limit Solution for the Modified Gross–Pitaevskii Equation

The modified Gross–Pitaevskii equation was derived and solved to obtain the 1D solution in the zero-energy limit. This stationary solution could account for the dominated contributions due to the kinetic effect as well as the chemical potential in inhomogeneous Bose gases.     

Profile dependence and measurement of absolute Raman scattering cross-section in optical fibres

A simple measurement method for the absolute Raman scattering cross-section of an optical fibre is presented. This method does not require a high power pump laser and it measures the fibre directly. It is also shown that the calculation of the cross-section depends on the fibre structure, such as its refractive index profile and the differential attenuation between the pump wavelength and Raman wavelength.<>     

Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Positively Thermo‐Sensitive Monodisperse Core–Shell Microspheres

In this paper, we report on a novel family of monodisperse thermo‐sensitive core–shell hydrogel microspheres that is featured with high monodispersity and positively thermo‐responsive volume phase transition characteristics with tunable swelling kinetics, i.e., the particle swelling is induced by an increase rather than a decrease in temperature. The microspheres were fabricated in a three‐step process. In the first step, monodisperse poly(acrylamide‐co‐styrene) seeds were prepared by emulsifier‐free emulsion polymerization. In the second step, poly(acrylamide) or poly[acrylamide‐co‐(butyl methacrylate)] shells were fabricated on the microsphere seeds by free radical polymerization. In the third step, the core–shell microspheres with poly‐ (acrylamide)/poly(acrylic acid) based interpenetrating polymer network (IPN) shells were finished by a method of sequential IPN synthesis. The proposed monodisperse core–shell microspheres provide a new mode of the phase transition behavior for thermo‐sensitive “smart” or “intelligent” monodisperse micro‐actuators that is highly attractive for targeting drug delivery systems, chemical separations, sensors, and so on.     

A multilevel soliton communication system

A multilevel soliton communication system is proposed and assessed. In this system, at the transmitter end each channel transmits its data via fundamental solitons with a pre-specified amplitude (i.e., soliton width). At the receiver end we take advantage of the sensitive relationship between the amount or fundamental soliton self-wavelength shift and the width of the soliton in the subpicosecond region. We first compress the incoming soliton noises to the subpicosecond level and pass them through a short length of fiber at the end of which the pulses have become separated in the wavelength domain since each soliton, corresponding to a data channel, has experienced a different Raman self-wavelength shift. The channels are then easily separated by optical filters. We have derived the design constraint relations for such a system. We have then heuristically designed a 40 Gbs (four channels) system for a 1000 km propagation distance (total data-rate distance product of 40 Tb/km). Numerical simulations and noise analyses have verified the feasibility and practicality of the proposed system with very good design margins. The wavelength jitter is found to be much smaller than the desired filter spacing, and thus its contribution to the bit error rate is negligible. We also argue that the system is more tolerant to Gordon-Haus timing jitter than conventional TDM soliton systems. The system is all fiber and is, therefore very cost effective as it does not require sophisticated electro-optic and microwave circuits for demultiplexing. The system can potentially operate at much higher speeds than those achievable in conventional soliton systems and it can be used in parallel with WDM soliton system     

Intrinsic thermal stability and quenching recovery of thin-film superconductors with thermal boundary resistance

The stability behaviour of a thin-film superconductor under a localized release of thermal disturbance is investigated. Two-dimensional conjugate film/substrate conduction equation with anisotropic thermal conductivity of the film, and Joule heat are employed to investigate effects of substrate and thermal properties on the intrinsic stability and quenching recovery. To consider the thermal boundary resistance between film and substrate, an interfacial-layer model (ILM) with very low diffusivity and an acoustic mismatch model (AMM) are employed. Results show that the thermal boundary resistance influences strongly the intrinsic stability. Thermal boundary resistance increases intrinsic stability if the thermal conductivity of the substrate or the disturbance energy is large. Higher Biot numbers and thermal conductivity ratios of film to substrate in longitudinal direction influence stability favorably. We demonstrate also that operation of a film/substrate system, such as YBCO/MgO, is either intrinsically stable or irrecoverably unstable.The authors wish to express their sincere appreciation to Dr. R. C. Chen for his invaluable advice and suggestions during the course of this paper. This research was supported by the National Science Council of the R. O. C. through grant NSC 83-0401-E-009-006. The computations were performed on the IBM ES/9000 at the National Center For High-Performance Computing.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。