Elicitor-Induced VOC Emission by Grapevine Leaves: Characterisation in the Vineyard

The present study is aimed at determining whether leaf volatile organic compounds (VOCs) are good markers of the grapevine response to defence elicitors in the field. It was carried out in two distinct French vineyards (Burgundy and Bordeaux) over 3 years. The commercial elicitor Bastid^® (Syngenta, Saint-Sauveur, France) (COS-OGA) was first used to optimise the VOCs’ capture in the field; by bagging stems together with a stir bar sorptive extraction (SBSE) sensor. Three elicitors (Bastid^®, copper sulphate and methyl jasmonate) were assessed at three phenological stages of the grapevines by monitoring stilbene phytoalexins and VOCs. Stilbene production was low and variable between treatments and phenological stages. VOCs—particularly terpenes—were induced by all elicitors. However, the response profiles depended on the type of elicitor, the phenological stage and the vineyard, and no sole common VOC was found. The levels of VOC emissions discriminated between weak (Bastid^® and copper sulphate) and strong (methyl jasmonate) inducers. Ocimene isomers were constitutively present in the overall blends of the vineyards and increased by the elicitors’ treatments, whilst other VOCs were newly released throughout the growing seasons. Nonetheless, the plant development and climate factors undoubtedly influenced the release and profiles of the leaf VOCs.     

Auf den Arsengehalt des Chlorkalks und des chlorsauren Kalis

Ohne Zusammenfassung     

Ma?analytische Bestimmung des Quecksilbers

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Simulations of rare events in fiber optics by interacting particle systems

In this paper we study the robustness of linear pulses, solitons, and dispersion-managed solitons, under the influence of random perturbations. First, we address the problem of the estimation of the outage probability due to polarization-mode dispersion. Second, we compare the pulse broadening due to random fluctuations of the group-velocity dispersion. We use an original interacting particle system to estimate the tails of the probability density functions of the pulse widths. A new adaptative Monte Carlo method is applied that enforces the simulations to probe the regions of practical importance by selection and mutation steps.     

Power Trench MOSFETs with very low specific on-resistance for 25V applications

In this paper, an investigation of the benefits of deep ultra violet lithography for the manufacturing of Trench MOSFETs and its impact on device performance is presented. We discuss experimental results for devices with a pitch size down to 0.6 μm fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are benchmarked against previously published TrenchMOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3 mΩ mm² at a breakdown voltage of 30 V (V_gs = 10 V).