Very high coercivities of top-layer diffusion Au/FePt thin films

The Au/FePt samples were prepared by depositing a gold cap layer at room temperature onto a fully ordered FePt layer, followed by an annealing at 800 °C for the purpose of interlayer diffusion. After the deposition of the gold layer and the high-temperature annealing, the gold atoms do not dissolve into the FePt Ll₀ lattice. Compared with the continuous FePt film, the TEM photos of the bilayer Au(60 nm)/FePt(60 nm) show a granular structure with FePt particles embedded in Au matrix. The coercivity of Au(60 nm)/FePt(60 nm) sample is 23.5 kOe, which is 85% larger than that of the FePt film without Au top layer. The enhancement in coercivity can be attributed to the formation of isolated structure of FePt ordered phase.     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.     

Nitride-based flip-chip ITO LEDs

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.     

Implementation of high-coupling and broadband transformer in RFCMOS technology

This paper proposes a structure for transformer with high-coupling, broadband, and small chip area characteristics using current silicon-based technology. The proposed device has tight coupling (k=0.92), wide bandwidth (f/sub SR/=30.8 GHz), and minimum chip area (OD=140 /spl mu/m). Furthermore, the analytical formula for calculating mutual inductance is derived in this study; experimental results indicate that the analytical formula is feasible. The proposed transformer will be useful in designing high-performance RF integrated circuits for wireless applications.     

Synthesis,and Antimycobacterial and Cytotoxic Evaluation of Certain Fluoroquinolone Derivatives

Certain 1‐ethyl‐ and 1‐aryl‐6‐fluoro‐1,4‐dihydroquinol‐4‐one derivatives were synthesized and evaluated for antimycobacterial and cytotoxic activities. Preliminary results indicated that, for 1‐aryl‐6‐fluoroquinolones, both 7‐(piperazin‐1‐yl)‐ and 7‐(4‐methylpiperazin‐1‐yl) derivatives, 9b and 11a , are able to completely inhibit the growth of M. tuberculosis at a concentration of 6.25 μg/ml, while the 7‐[4‐(2‐oxo‐2‐phenylethyl)piperazin‐1‐yl] derivative 13 exhibits only 31% growth inhibition at the same concentration. For 1‐ethyl‐6‐fluoroquinolones, both 7‐[4‐(2‐oxopropyl)piperazin‐1‐yl]‐ and 7‐[4‐(2‐oxo‐2‐phenylethyl)piperazin‐1‐yl]‐derivatives, 2a and 2b , respectively, show complete inhibition, while their 2‐iminoethyl and substituted phenyl counterparts 3a and 2c are less active. In addition, the 6,8‐difluoro derivative was a more‐favorable inhibitor than its 6‐fluoro counterpart ( 2b vs. 2d ). These results deserve full attention especially because 2a, 2b, 9b , and 11a are non‐cytotoxic at a concentration of 100 μM . Furthermore, compound 9b proved to be a potent anti‐TB agent with selective index (SI)>40 and an EC₉₀ value of 5.75 μg/ml.     

Enhancement of the imprinting effect in cholesterol-imprinted microporous silica

A sol-gel method has been used to fabricate a cholesterol MIP for application in polar solutions. In this study, (cholesteryl propylcarbamate)triethoxysilane and tetraethyl orthosilicate were used as the hydrophobic monomer and crosslinker, respectively. The MIP had a larger pore volume when formation of the polymer was catalyzed at a higher pH than when it was formed at lower pH values, with the pore diameters being 3.5 nm and 2 nm, respectively for materials formed at high and low pH values. Both of these pore volumes were greater than those found for the respective control polymers formed without template. However, only the polymers formed at low pH values showed an imprinting effect. Compared with other methods explored, the sol-gel procedure gave only a small amount of non-specific binding for both the MIP and NIP when synthesized at low pH values. The largest imprinting-induced promotion of binding (IPB) value of the MIP (13 650%) was obtained with [HCl] = 0.01 M in the sol-gel solution. The MIP showed high selectivity towards cholesterol in comparison with other steroid hormones, and also to a lesser extent recognized vitamin D3 in methanol solution containing 5 vol.% water.     

Certain asymptotic expansions for laguerre polynomials and Charlier polynomials

Here proposed are certain asympotic expansion formulas for L _n ^(∞-1) (λz) and C _n ^(∞) (λz) in which 0<w=0(λ) and C_n/(^w)(λz), z being a complex number. Also presented are certain estimates for the remainders (error bounds) of the asymptotic expansions within the regions D₁(-∞<R_ez<=1/2(ω/λ) and D₂(1/2(ω/λ)<=Re_z<∞), respectively. Supported by NSERC (Canada) and also by the National Natural Science Foundation of China.     

The base current degradation of poly-emitter BJTs under AC stress

A simple model for the analysis of the ac stress effect in poly-emitter bipolar transistors is presented. Apart from the reverse-bias induced hot-carrier effects, the forward-bias recovery effect is a key factor under ac stress, it obviously suppresses the base current degradation of the device which is caused during the reverse-bias periods. In this work, we derived the relationship between the excess base current and the stress time for different ac stress conditions. This model is verified with experimental results.<>     

Cracking Go

Many of the early computer-chess researchers hailed from the fields of psychology or artificial intelligence and believed that chess programs should mimic human thinking. Specifically, they wanted computers to examine only playing sequences that were meaningful according to some human reasoning process. In computer chess this policy, known as selective search, never really made progress. The reason is that humans are extremely good at recognizing patterns; it is one of the things that we do best. The article focuses on weiqi, an ancient Chinese board game, better known in the West by the Japanese name of Go, whose combinatorial complexity is many orders of magnitude greater than that of chess. Go is played on a board crisscrossed by 19 vertical and 19 horizontal lines whose 361 points of intersection constitute the playing field. The object is to conquer those intersection points.