An explicit closed-form formula for profit-maximizing k-out-of-n systems subject to two kinds of failures

This paper derives and analyzes an explicit closed-form formula for the optimal k in k-out-of-n systems consisting of i.i.d. components. The system can be in one of two possible modes with a pre-specified probability. The components are subject to failure in each of the two modes. The costs of the two kinds of system failures are generally not identical. Since the formula is explicit, it permits a calculation of the optimal k directly in terms of the parameters of the system. In addition, it yields many results concerning both the bounds of the optimal k and the effects of a change in parameters on the optimal k and on the optimized value of the system's expected profit.     

Adsorption of water on JSC‐1A (simulated moon dust samples)—a surface science study

JSC‐1a (a simulated lunar dust sample) supported on a silica wafer (SiO₂/Si(111)) has been characterized by scanning electron microscopy (SEM), energy dispersive x‐ray (EDX) spectroscopy, and Auger electron spectroscopy (AES). The adsorption kinetics of water has been studied primarily by thermal desorption spectroscopy (TDS) and in addition by collecting isothermal adsorption transients. Blind experiments on the silica support have been performed as well. JSC‐1a consists mostly of aluminosilicate glass and other minerals containing Fe, Na, Ca, and Mg, as characterized in detail in prior studies, for example, at NASA. The particle sizes span the range from a few micrometers up to 100 µm. At small exposures, H₂O TDS is characterized by broad (100–450) K structures; at large exposures, distinct TDS peaks emerge, which are assigned to amorphous solid water (ASW) (145 K) and crystalline ice (CI) (165 K). Water dissociates on JSC‐1a at small exposures but not on the bare silica support. Coadsorption TDS data (alkane–water mixtures) indicate that rather porous condensed ice layers form at large exposures, with the mineral particles acting most likely as nucleation sites. At thermal impact energies, the initial adsorption probability amounts to 0.92 ± 0.05. It is evident that the drop‐and‐dry technique, developed in studies about nanoparticles/tubes, can be extended to obtain samples for surface science studies based on powders consisting of particles with rather large diameters. Copyright © 2008 John Wiley & Sons, Ltd.     

MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

Low-frequency and high-frequency Capacitance-Voltage（C-V） curves of Metal-Oxide-Semiconductor Capacitors（MOSC）,including electron and hole trapping at the dopant donor and acceptor impurities,are presented to illustrate giant trapping capacitances,from>0.01C_ox to>10C_ox.Five device and materials parameters are varied for fundamental trapping parameter characterization,and electrical and optical signal processing applications.Parameters include spatially constant concentration of the dopant-donor-impurity electron trap,N_DD,the ground state electron trapping energy level depth measured from the conduction band edge, E_C—E_D,the degeneracy of the trapped electron at the ground state,g_D,the device temperature,T,and the gate oxide thickness,x_OX.     

Unbounded sequences of stable limit cycles in the delayed Duffing equation: an exact analysis

Nonlinear Dynamics - The delayed Duffing equation $${\ddot{x}}(t)+x(t-T)+x^3(t)=0$$ is shown to possess an infinite and unbounded sequence of rapidly oscillating, asymptotically stable periodic...     

MOS场引晶体管双极理论和实验

提出场引晶体管双极理论.替代已55年久,1952 Shockley发明单极理论.解释近来双栅纳米硅MOS晶体管实验特性--两条电子和两条空穴表面沟道,同时并存.理算晶体管输出特性和转移特性,包括实用硅基及栅氧化层厚度.理算比较最近报道实验,利用硅FinFET,含(金属/硅)和(p/n)结,源和漏接触.实验支持双极理论.建议采用单管,实现CMOS倒相电路和SRAM存储电路.     

Reagenzien zar Identifizierung von Aldehyden und Ketonen.

Ohne Zusammenfassung     

Aldehyde

Ohne Zusammenfassung     

Profiling interface traps in MOS transistors by the DCcurrent-voltage method

Position profiling the interface trap density along the channel length of metal-oxide-silicon transistors by the Direct-Current Current-Voltage method is illustrated for five density variations: zero, peaked in drain junction space-charge layer, constant in channel, nonconstant in channel, and peaked in drain junction space-charge layer and nonconstant in channel. The interface trap densities were monitored by MOS transistor's d.c. body current and the density profiles were obtained from the body-drain and body-source differential conductance versus drain or source bias voltage. An experimental demonstration is given for a 1.6 μm n-channel Si MOS transistor with about 10¹¹ traps/cm² generated by channel hot electron stress