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1.
Popular biorthogonal wavelet filters via a lifting scheme and its application in image compression 总被引:2,自引:0,他引:2
Cheng L. Liang D.L. Zhang Z.H. 《Vision, Image and Signal Processing, IEE Proceedings -》2003,150(4):227-232
A technique using a lifting scheme is presented for constructing compactly supported wavelets whose coefficients are composed of free variables locating in an interval. An efficient approach-based wavelet for image compression is developed by selecting the coefficients of the 9-7 wavelet filter and associated lifting scheme. Furthermore, the rationalised coefficients wavelet filter that can be implemented with simple integer arithmetic is achieved and its characteristic is close to the well known original irrational coefficients 9-7 wavelet filters developed by A. Cohen et al. (Commun. Pure Appl. Maths., vol.45, no.1, p.485-560, 1992). To reduce the computational cost of image coding applications further, an acceleration technique is proposed for the lifting steps. Software and hardware simulations show that the new method has very low complexity, and simultaneously preserves the high quality of the compressed image. 相似文献
2.
In this letter, we introduce and investigate a new problem referred to as the All Hops Shortest Paths (AHSP) problem. The AHSP problem involves selecting, for all hop counts, the shortest paths from a given source to any other node in a network. We derive a tight lower bound on the worst-case computational complexities of the optimal comparison-based solutions to AHSP. 相似文献
3.
The γcmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS.
Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed
to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of
CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows
the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low
temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and
surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that
turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation
of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives
by increasing the contact between two reacting phases. 相似文献
4.
Padavattan Govindaswamy Patrick J. Carroll Yurij A. Mozharivskyj Mohan Rao Kollipara 《Journal of Chemical Sciences》2006,118(4):319-326
The reaction of [{(η5-C5Me5)M(μ-Cl)Cl}2] {where M = Rh (1), Ir (2)} with functionalized phosphine viz., diphenyl-2-pyridylphosphine (PPh2Py) in dichloromethane solvent yield neutral ϰ1-P-coordinated rhodium and iridium complexes [(η5-C5Me5)RhCl2(κ1-P-PPh2Py)]3 and [(η5-C5Me5) IrCl2(ϰ1-P-PPh2Py)]4. Reaction of complexes 1 and 2 with the ligand PPh2Py in methanol under reflux give bis-substituted complexes such as [(η5-C5Me5)RhCl(ϰ1-P-PPh2Py)2]+
5 and [(η5-C5Me5)IrCl(ϰ1-P-PPh2Py)2]+
6, whereas stirring in methanol at room temperature gives P-, N-chelating complexes of the type [(η5-C5Me5)RhCl(ϰ2-P-N-PPh2Py)]+ 7 and [(η5-C5Me5)IrCl(ϰ2-P-N-PPh2Py)]+
8. Neutral ϰ1-P-coordinated complexes [(η5-C5Me5)RhCl2(ϰ1-P-PPh2Py)]3 and [(η5-C5Me5)IrCl2(ϰ1-P-PPh2Py)]4 easily undergo conversion to the cationic P-, N-chelating complexes [(η5-C5Me5)RhCl(ϰ2-P-N-PPh2Py)]+
7 and [(η5-C5Me5) IrCl(ϰ2-P, N-PPh2Py)]+
8 on stirring in methanol at room temperature. These complexes are characterized by FT-IR and FT-NMR spectroscopy as well as
analytical methods. The molecular structures of the representative complexes [(η5-C5Me5)RhCl2(ϰ1-P-PPh2Py)]3, [(η5-C5Me5)IrCl2(ϰ1-P-PPh2Py)]4 and hexafluorophosphate salt of complex [(η5-C5Me5)IrCl(ϰ2-P-PPh2Py)2]+
6 are established by single-crystal X-ray diffraction methods 相似文献
5.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
6.
分析了韩国、日本及国内运营商手机游戏业务的发展状况.探讨了手机游戏业务的模式.论述了该业务的战略定位和市场前景。从地区提供给移动通信市场对外部环境、产业链的准备是否充分以及运营商内部的资源和运营状况等三个方面阐明了手机游戏业务发展的关键因素。 相似文献
7.
Javier Ramírez Antonio García Uwe Meyer-Bäse Fred Taylor Antonio Lloris 《The Journal of VLSI Signal Processing》2003,33(1-2):171-190
Currently there are design barriers inhibiting the implementation of high-precision digital signal processing (DSP) objects with field programmable logic (FPL) devices. This paper explores overcoming these barriers by fusing together the popular distributed arithmetic (DA) method with the residue number system (RNS) for use in FPL-centric designs. The new design paradigm is studied in the context of a high-performance filter bank and a discrete wavelet transform (DWT). The proposed design paradigm is facilitated by a new RNS accumulator structure based on a carry save adder (CSA). The reported methodology also introduces a polyphase filter structure that results in a reduced look-up table (LUT) budget. The 2C-DA and RNS-DA are compared, in the context of a FPL implementation strategy, using a discrete wavelet transform (DWT) filter bank as a common design theme. The results show that the RNS-DA, compared to a traditional 2C-DA design, enjoys a performance advantage that increases with precision (wordlength). 相似文献
8.
9.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
10.
Yuhua Cheng Chih-Hung Chen Matloubian M. Deen M.J. 《Electron Devices, IEEE Transactions on》2002,49(3):400-408
High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and fT characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models 相似文献