Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

视频流无缝拼接中的帧转换

帧转换在MPEG-2视频流无缝拼接中有着非常重要的作用。文中就压缩域视频流的无缝拼接中的帧转换技术进行了深入的分析。文中以12帧IBBP结构的GOP为例分析了拼接点处应采用的帧转换方案,在此基础上给出帧转换的具体实现,并通过一个帧转换实验对之进行了验证。     

Ripple: a wireless token-passing protocol for multi-hop wireless mesh networks

This work presents a wireless token-passing protocol, named Ripple, for wireless mesh networks (WMNs). In contrast to existing random-access approaches, Ripple uses a decentralized controlled-access approach to protect nodes from unintentional packet collisions and maximize the spatial reuse. The performance of Ripple under an error-free wireless channel was investigated and the accuracy of the analysis was verified by simulation. Simulation results also indicated that Ripple achieved throughput, stability, and QoS enhancement than that of 802.11 DCF under a highly loaded situation.     

WDM网络光层保护新算法的探讨

首先介绍了几种按照不同标准划分的WDM网络光层保护方法,然后提出了三种实现光层保护的新算法,对它们的内容和性能做了详细描述。按照提出的算法所求得的解,可以为WDM网络提供新的光层保护方式。     

YBa2Cu1-xCox(Cu1-yZny)2Oz体系的Co,Zn共同掺杂效应

本文报道通过对YBa₂Cu_1-xCo_x(Cu_1-yZn_y)₂O_z(0≤x,y≤0.1)体系晶体结构、氧含量、正常态电阻-温度关系、Hall效应以及超导临界温度等的综合测量,发现随着Co和Zn含量的增加,体系经历了从正交结构的超导金属向四方结构的非超导半导体的转变,超导临界温度T_c和载流子浓度n_h均迅速下降,Co 关键词：     

基于TC8830AF的智能语音卡结构与设计

本文描述一种基于８０３１单片机和ＴＣ８８３０ＡＦ语音处理器的ＰＣ机智能语音卡，通过软硬件设计解决了ＰＣ－８０３１－ＴＣ８８３０ＡＦ结构中的通讯问题。该语音卡在进行语音的合成、编辑和播放时，仅占用极少的ＰＣ机ＣＰＵ处理时间，能满足计算机系统进行实时语音合成的要求。     

High-frequency small signal AC and noise modeling of MOSFETs for RFIC design

High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and f_T characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method