三维频率复用环境中的信道偏移指配方法

一种新的信道指配法－信道偏移指配方法正受到越来越多的重视，这种方法能在现有的频率资源条件下，较大地提高移动通信系统的容量。本文主要讨论了三维频率复用环境中的信道偏移指配方法，详细地分析了同频复用和相邻信道使用距离，定量地计量了信道偏移系统的频谱节约效率。本文最后还通过几个实例验证了所提算法的实用性。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

解可分离约束双凹规划问题的一种外逼近方法[英文]

在本文中，我们提出了双凹规划问题和更一般的广义凹规划问题。我们给出了双凹规划问题的整体最优性条件，并构造了一个有限终止外逼近算法。     

Quantum Cosmology in CGBD Theory

We apply the theory developed in quantum cosmology to a model of charged generalized Brans–Dicke gravity. This is a quantum model of gravitation interacting with a charged Brans–Dicke type scalar field which is considered in the Pauli frame. The Wheeler–DeWitt equation describing the evolution of the quantum Universe is solved in the semiclassical approximation by applying the WKB approximation. The wave function of the Universe is also obtained by applying both the Vilenkin-like and the Hartle–Hawking-like boundary conditions. We then make predictions from the wave functions and infer that the Vilenkin's boundary condition is more reasonable in the Brans–Dicke gravity models leading a large vacuum energy density at the beginning of the inflation.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.     

关于RNP和SCS的若干等价条件

使用切片方法，讨论了Banach空间中有界闭凸子集的RNP和SCS的若干等价条件．     

THE ASYMPTOTIC SOLUTION FOR A CLASS OF SINGULARLY PERTURBED PROBLEM FOR SEMILINEAR SINGULAR EQUATION

The singularly perturbed boundary value problem for a class of semilinearsingular equation is considered. Using a simple and special method the asym-ptotic behavior of solution is studied.