Optical spectroscopy of Yb/Er codoped NaY(WO4)2 crystal

Erbium and ytterbium codoped double tungstates NaY(WO₄)₂ crystals were prepared by using Czochralski (CZ) pulling method. The absorption spectra in the region 290-2000 nm have been recorded at room temperature. The Judd-Ofelt theory was applied to the measured values of absorption line strengths to evaluate the spontaneous emission probabilities and stimulated emission cross sections of Er³⁺ ions in NaY(WO₄)₂ crystals. Intensive green and red lights were measured when the sample were pumped by a 974 nm laser diode (LD), especially, the intensities of green upconversion luminescence are very strong. The mechanism of energy transfer from Yb³⁺ to Er³⁺ ions was analyzed. Energy transfer and nonradiative relaxation played an important role in the upconversion process. Photoexcited luminescence experiments are also fulfilled to help analyzing the transit processes of the energy levels.     

偏振模色散统计特性的研究

利用动态方程研究了偏振模色散矢量的统计特性 ,分别用统计系综和频率系综两种方法进行数值模拟。数值结果表明 ,统计系综和频率系综两种方法的结果一致。在大归一化距离条件下 ,均方根时延的平方随归一化距离线性变化 ;偏振模色散矢量的各个分量服从高斯分布 ,差分群时延服从麦克斯韦分布 ;偏振模色散矢量弥散于整个邦加球     

Multipartite Entanglement Preparation and Quantum Communication with Atomic Ensembles

We propose an experimentally feasible scheme to generate Greenberger-Horne-Zeilinger type of maximal entanglement among three atomic ensembles, and show one of the applications, controlled secure direct communication. The scheme involves laser manipulation of atomic ensembles, quarter- and half-wave plates, beam splitters, polarizing beam splitters and single-photon detectors, which are within the reach of current experimental technology.     

闪烁体荧光传输特性对ETOF探测器性能的影响

为了对BESⅢ端盖飞行时间探测器(ETOF)的测试结果给出合理的解释, 采用Monte Carlo模拟软件包Geant4, 对该探测器测量高能带电粒子的性能进行模拟研究. 详细探讨了当粒子击中ETOF模块不同位置时, 其闪烁体荧光传输特性与探测器模块输出信号之间的关联, 以及PMT输出信号甄别阈值的选取对闪烁探测器本征时间分辨的影响, 并寻找可能的改善时间分辨的方法. 为进一步提高ETOF的性能提供参考.     

三维频率复用环境中的信道偏移指配方法

一种新的信道指配法－信道偏移指配方法正受到越来越多的重视，这种方法能在现有的频率资源条件下，较大地提高移动通信系统的容量。本文主要讨论了三维频率复用环境中的信道偏移指配方法，详细地分析了同频复用和相邻信道使用距离，定量地计量了信道偏移系统的频谱节约效率。本文最后还通过几个实例验证了所提算法的实用性。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

解可分离约束双凹规划问题的一种外逼近方法[英文]

在本文中，我们提出了双凹规划问题和更一般的广义凹规划问题。我们给出了双凹规划问题的整体最优性条件，并构造了一个有限终止外逼近算法。