Design of finite-length metal-clad optical waveguide polarizer

The performance of optical metal-clad waveguide polarizers is analyzed in this paper with a view to optimizing the extinction ratio, a condition for which power of the TM mode is completely attenuated is identified here. In general, such a condition corresponding to an infinitely high extinction ratio can be met for a wide range of buffer layer thicknesses by selection of metal film thickness and polarizer length. When a very thick (e.g., semi-infinitely thick) metal film is used, the aforementioned condition can be met with a properly chosen buffer layer thickness and polarizer length. The numerical results show that all the polarizers designed here for realization of infinitely high extinction ratios have either quite low or reasonably acceptable attenuations for the TE mode     

Superconducting control for surge currents

Systems designed to use superconductors to limit fault currents in power grids are undergoing testing. The authors describe superconducting fault current limiters (SCFCL) which may be categorised into resistive or shielded core types. The features and operation of each type of device are outlined. Both the shielded-core and resistive types of SCFCL use the same amount of superconductor material to achieve a given limitation behavior. This is because the rated power per volume of conductor is determined by the product of fault-induced field and critical current, which is the same for both devices, assuming the same type of superconducting material is employed. The shielded-core limiter works only with AC currents and is much larger and heavier than the resistive SCFCL. While there is only one large program left in the low-temperature type of SCFCL, more than 10 major projects are under way worldwide on the high-temperature type of device. The main reason is the lower HTS cooling cost     

A new space-vector-modulated control for a unidirectionalthree-phase switch-mode rectifier

A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results     

Double-diffusive convection for a heated cylinder submerged in a salt-stratified fluid layer

Double-diffusive convection due to a cylindrical source submerged in a salt-stratified solution is numerically investigated in this study. For proper simulation of the vortex generated around the cylinder, a computational domain with irregular shape is employed. Flow conditions depend strongly on the thermal Rayleigh number, Ra _T , and the buoyancy ratio, R _ρ. There are two types of onset of instability existing in the flow field. Both types are due to either the interaction of the upward temperature gradient and downward salinity gradient or the interaction of the lateral temperature gradient and downward salinity gradient. The onset of layer instability due to plume convection is due to the former, whereas, the onset of layer instability of layers around the cylinder is due to the latter. Both types can be found in the flow field. The transport mechanism of layers at the top of the basic plume belongs to former while that due to basic plume and layer around the cylinder are the latter. The increase in Ra _T reinforces the plume convection and reduces the layer numbers generated around the cylinder for the same buoyancy ratio. For the same Ra _T , the increase of R _ρ suppresses the plume convection but reinforces the layers generated around the cylinder. The profiles of local Nusselt number reflects the heat transfer characteristics of plume convection and layered structure. The profiles of averaged Nusselt number are between the pure conduction and natural convection modes and the variation is due to the evolution of layers. Received on 13 September 1996     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

Analysis of scattering from rough surfaces at large incidenceangles using a periodic-surface moment method

The moment method is used to calculate electromagnetic backscattering from one-dimensionally rough surfaces at near-grazing incidence (angles of incidence up to 89°). A periodic representation of the scattering surface is used to prevent edge effects in the calculated scattering without the use of an artificial illumination weighting function. A set of universal series common to all elements of the moment interaction matrix are derived that allow the efficient application of the moment method to the periodic surface. Comparison with other moment method implementations demonstrates the efficiency of this approach. The scattering from surfaces with Gaussian roughness spectra is calculated at both horizontal and vertical polarizations, and the results are compared with the theoretical predictions of the small-perturbation method (SPM) and Kirchhoff approximation (KA). SPM shows the expected loss of accuracy in predicting the vertically polarized backscattering from small-roughness, short-correlation-length surfaces at large incidence angles. SPM accurately predicts the backscattering from the same type of surface at incidence up to 89° at horizontal polarization, KA provides accurate estimates of the scattering from long correlation-length surfaces as long as the incidence angle is small enough that surface self-shadowing does not occur. When shadowing occurs, KA severely underpredicts vertically polarized backscattering and less severely overpredicts backscattering at horizontal polarization     

Effective electromagnetic and chiral parameters of chiral composite material

The effective parameters of chiral composite are studied using a simple model, that is, randomly oriented non-interacting wire helices embedded in a nonchiral host medium. It is found that both the effective permittivity ? and permeability μ are independent on the handedness of the chiral objects while the effective chirality admittance ξ is dependent. It is also found that when the ratio of the radius of the chiral helix to its pitch is about 0.23, maximum chirality admittance is achieved. The effective parameters of equichiral sample are also discussed.     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)