SIP协议在VoIP终端的设计和实现

SIP是下一代网络中的重要协议,而基于SIP协议的VoIP业务已经对传统话音业务形成了重要的威胁,并成为各大运营商竞争的重点业务之一.概述了VoIP业务的发展现状,介绍了SIP协议的实体、消息机制以及它所提供的业务,通过对SIP协议的原理及工作流程的分析,论证了其在实现一个VoIP系统中的优势,在此基础上设计并实现了一个基于SIP协议的VoIP终端.     

宽带无线移动通信网络优化及相关发展策略思考

在介绍宽带无线移动发展趋势所采用的新技术的基础上，论述了宽带无线移动通信网络优化及相关发展策略的一些问题。     

基于素性检验思想的不可约多项式判断

论文将Fermat素性检验的思想运用于不可约多项式的判断,给出了一个对于不可约判断问题的Monte Carlo 算法,分析了该算法的计算复杂度问题,并且给出了次数在200以内的检验结果。     

A call admission and rate control scheme for multimedia support over IEEE 802.11 wireless LANs

Quality of service (QoS) support for multimedia services in the IEEE 802.11 wireless LAN is an important issue for such WLANs to become a viable wireless access to the Internet. In this paper, we endeavor to propose a practical scheme to achieve this goal without changing the channel access mechanism. To this end, a novel call admission and rate control (CARC) scheme is proposed. The key idea of this scheme is to regulate the arriving traffic of the WLAN such that the network can work at an optimal point. We first show that the channel busyness ratio is a good indicator of the network status in the sense that it is easy to obtain and can accurately and timely represent channel utilization. Then we propose two algorithms based on the channel busyness ratio. The call admission control algorithm is used to regulate the admission of real-time or streaming traffic and the rate control algorithm to control the transmission rate of best effort traffic. As a result, the real-time or streaming traffic is supported with statistical QoS guarantees and the best effort traffic can fully utilize the residual channel capacity left by the real-time and streaming traffic. In addition, the rate control algorithm itself provides a solution that could be used above the media access mechanism to approach the maximal theoretical channel utilization. A comprehensive simulation study in ns-2 has verified the performance of our proposed CARC scheme, showing that the original 802.11 DCF protocol can statically support strict QoS requirements, such as those required by voice over IP or streaming video, and at the same time, achieve a high channel utilization. Hongqiang Zhai received the B.E. and M.E. degrees in electrical engineering from Tsinghua University, Beijing, China, in July 1999 and January 2002 respectively. He worked as a research intern in Bell Labs Research China from June 2001 to December 2001, and in Microsoft Research Asia from January 2002 to July 2002. Currently he is pursuing the PhD degree in the Department of Electrical and Computer Engineering, University of Florida. He is a student member of IEEE. Xiang Chen received the B.E. and M.E. degrees in electrical engineering from Shanghai Jiao Tong University, Shanghai, China, in 1997 and 2000, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Florida, Gainesville, in 2005. He is currently a Senior Research Engineer at Motorola Labs, Arlington Heights, IL. His research interests include resource management, medium access control, and quality of service (QoS) in wireless networks. He is a Member of Tau Beta Pi and a student member of IEEE. Yuguang Fang received a Ph.D degree in Systems and Control Engineering from Case Western Reserve University in January 1994, and a Ph.D degree in Electrical Engineering from Boston University in May 1997. From June 1997 to July 1998, he was a Visiting Assistant Professor in Department of Electrical Engineering at the University of Texas at Dallas. From July 1998 to May 2000, he was an Assistant Professor in the Department of Electrical and Computer Engineering at New Jersey Institute of Technology. In May 2000, he joined the Department of Electrical and Computer Engineering at University of Florida where he got the early promotion with tenure in August 2003 and has been an Associate Professor since then. He has published over one hundred (100) papers in refereed professional journals and conferences. He received the National Science Foundation Faculty Early Career Award in 2001 and the Office of Naval Research Young Investigator Award in 2002. He is currently serving as an Editor for many journals including IEEE Transactions on Communications, IEEE Transactions on Wireless Communications, IEEE Transactions on Mobile Computing, and ACM Wireless Networks. He is also actively participating in conference organization such as the Program Vice-Chair for IEEE INFOCOM’2005, Program Co-Chair for the Global Internet and Next Generation Networks Symposium in IEEE Globecom’2004 and the Program Vice Chair for 2000 IEEE Wireless Communications and Networking Conference (WCNC’2000).     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

基于水印的图像认证和完整性保护技术

数字水印技术的发展为解决图像认证和完整性保护问题提供了新的思路。对用于篡改检测和图像认证的水印技术做了综述。数字水印技术根据其识别差错的能力分为四种类型:易损水印、半易损水印、混合水印和自嵌入水印。最后还对水印认证技术的安全性问题进行了讨论。     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

化学复合镀层激光处理研究

研究了激光处理对Ni-P -SiC化学复合镀层的影响。借助于扫描电镜、能谱仪、X射线衍射、显微硬度计等设备对激光处理后复合镀层的表面形貌、组织结构及性能进行了综合分析。结果表明 ,对复合镀层进行激光处理可以获得与炉内加热同样的镀层硬度 ,且当激光功率 4 0 0W ,扫描速度 1.5m /min时 ,镀层硬度高于炉内加热的硬度     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

单元串联式多电平高压变频器的起源、现状和展望

本文对单元串联式多电平高压变频器的起源和现状进行了总结,同时从无速度传感器矢量控制、大容量化、冗余设计等方面对该技术未来的发展趋势进行了展望。