全文获取类型
收费全文 | 92491篇 |
免费 | 12264篇 |
国内免费 | 8788篇 |
专业分类
化学 | 47015篇 |
晶体学 | 688篇 |
力学 | 4699篇 |
综合类 | 534篇 |
数学 | 8529篇 |
物理学 | 25803篇 |
无线电 | 26275篇 |
出版年
2024年 | 368篇 |
2023年 | 2115篇 |
2022年 | 2618篇 |
2021年 | 3188篇 |
2020年 | 3139篇 |
2019年 | 2961篇 |
2018年 | 2620篇 |
2017年 | 2459篇 |
2016年 | 3565篇 |
2015年 | 3879篇 |
2014年 | 4657篇 |
2013年 | 6085篇 |
2012年 | 7218篇 |
2011年 | 7383篇 |
2010年 | 5331篇 |
2009年 | 5404篇 |
2008年 | 5674篇 |
2007年 | 5207篇 |
2006年 | 4995篇 |
2005年 | 4348篇 |
2004年 | 3325篇 |
2003年 | 2707篇 |
2002年 | 2380篇 |
2001年 | 2110篇 |
2000年 | 2062篇 |
1999年 | 2185篇 |
1998年 | 1930篇 |
1997年 | 1660篇 |
1996年 | 1668篇 |
1995年 | 1500篇 |
1994年 | 1346篇 |
1993年 | 1188篇 |
1992年 | 1057篇 |
1991年 | 892篇 |
1990年 | 722篇 |
1989年 | 588篇 |
1988年 | 470篇 |
1987年 | 392篇 |
1986年 | 344篇 |
1985年 | 334篇 |
1984年 | 235篇 |
1983年 | 202篇 |
1982年 | 170篇 |
1981年 | 125篇 |
1980年 | 91篇 |
1979年 | 63篇 |
1978年 | 62篇 |
1976年 | 60篇 |
1975年 | 61篇 |
1973年 | 67篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
121.
论文将Fermat素性检验的思想运用于不可约多项式的判断,给出了一个对于不可约判断问题的Monte Carlo 算法,分析了该算法的计算复杂度问题,并且给出了次数在200以内的检验结果。 相似文献
122.
Quality of service (QoS) support for multimedia services in the IEEE 802.11 wireless LAN is an important issue for such WLANs
to become a viable wireless access to the Internet. In this paper, we endeavor to propose a practical scheme to achieve this
goal without changing the channel access mechanism. To this end, a novel call admission and rate control (CARC) scheme is
proposed. The key idea of this scheme is to regulate the arriving traffic of the WLAN such that the network can work at an
optimal point. We first show that the channel busyness ratio is a good indicator of the network status in the sense that it
is easy to obtain and can accurately and timely represent channel utilization. Then we propose two algorithms based on the
channel busyness ratio. The call admission control algorithm is used to regulate the admission of real-time or streaming traffic
and the rate control algorithm to control the transmission rate of best effort traffic. As a result, the real-time or streaming
traffic is supported with statistical QoS guarantees and the best effort traffic can fully utilize the residual channel capacity
left by the real-time and streaming traffic. In addition, the rate control algorithm itself provides a solution that could
be used above the media access mechanism to approach the maximal theoretical channel utilization. A comprehensive simulation
study in ns-2 has verified the performance of our proposed CARC scheme, showing that the original 802.11 DCF protocol can
statically support strict QoS requirements, such as those required by voice over IP or streaming video, and at the same time,
achieve a high channel utilization.
Hongqiang Zhai received the B.E. and M.E. degrees in electrical engineering from Tsinghua University, Beijing, China, in July 1999 and January
2002 respectively. He worked as a research intern in Bell Labs Research China from June 2001 to December 2001, and in Microsoft
Research Asia from January 2002 to July 2002. Currently he is pursuing the PhD degree in the Department of Electrical and
Computer Engineering, University of Florida. He is a student member of IEEE.
Xiang Chen received the B.E. and M.E. degrees in electrical engineering from Shanghai Jiao Tong University, Shanghai, China, in 1997
and 2000, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Florida, Gainesville,
in 2005. He is currently a Senior Research Engineer at Motorola Labs, Arlington Heights, IL. His research interests include
resource management, medium access control, and quality of service (QoS) in wireless networks. He is a Member of Tau Beta
Pi and a student member of IEEE.
Yuguang Fang received a Ph.D degree in Systems and Control Engineering from Case Western Reserve University in January 1994, and a Ph.D
degree in Electrical Engineering from Boston University in May 1997.
From June 1997 to July 1998, he was a Visiting Assistant Professor in Department of Electrical Engineering at the University
of Texas at Dallas. From July 1998 to May 2000, he was an Assistant Professor in the Department of Electrical and Computer
Engineering at New Jersey Institute of Technology. In May 2000, he joined the Department of Electrical and Computer Engineering
at University of Florida where he got the early promotion with tenure in August 2003 and has been an Associate Professor since
then. He has published over one hundred (100) papers in refereed professional journals and conferences. He received the National
Science Foundation Faculty Early Career Award in 2001 and the Office of Naval Research Young Investigator Award in 2002.
He is currently serving as an Editor for many journals including IEEE Transactions on Communications, IEEE Transactions on
Wireless Communications, IEEE Transactions on Mobile Computing, and ACM Wireless Networks. He is also actively participating
in conference organization such as the Program Vice-Chair for IEEE INFOCOM’2005, Program Co-Chair for the Global Internet
and Next Generation Networks Symposium in IEEE Globecom’2004 and the Program Vice Chair for 2000 IEEE Wireless Communications
and Networking Conference (WCNC’2000). 相似文献
123.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
124.
数字水印技术的发展为解决图像认证和完整性保护问题提供了新的思路。对用于篡改检测和图像认证的水印技术做了综述。数字水印技术根据其识别差错的能力分为四种类型:易损水印、半易损水印、混合水印和自嵌入水印。最后还对水印认证技术的安全性问题进行了讨论。 相似文献
125.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献
126.
127.
Shiao-Shien Chen Tung-Yang Chen Tien-Hao Tang Jin-Lian Su Tzer-Min Shen Jen-Kon Chen 《Electron Devices, IEEE Transactions on》2003,50(7):1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs. 相似文献
128.
129.
应用Nd:YAG激光(波长1.06μm,功率5w,照射时间0.5-3 min)和Ar+激光(波长488nm,功率70mw,照射时间5-15min)对长期保存的不同保存形式的塔胞藻(Pyramidomonassp.)进行辐照处理。研究了不同剂量激光辐照对藻体生长和叶绿素含量的影响。实验结果表明:照射剂量为60s的Nd:YAG激光及剂量为15min的Ar+激光对液体保存形式的藻种有较明显的促长效果,接种后这两种激光处理组的比生长速率分别较对照提高达53.33%和28.89%,叶绿素含量分别增加73.33%和65.69%。两种激光对液体保存藻种的活化效果均好于固体保存种。 相似文献
130.