自主创新导向下的TD-SCDMA与NGBWM务实发展战略思考

以TD—SCDMA既有进展及面临的挑战与NGBWM的发展走向为基础，重点论述自主创新导向下的TD—SCDMA与NGBWM务实发展战略思考。     

Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

Matrix model in a class of time dependent supersymmetric backgrounds

We discuss the matrix model in a class of 11D time dependent supersymmetric backgrounds as obtained in [B. Chen, Phys. Lett. B 632 (2006) 393, hep-th/0508191]. We construct the matrix model action through the matrix regularization of the membrane action in the background. We show that the action is exact to all orders of fermionic coordinates. Furthermore we discuss the fuzzy sphere solutions in this background.     

A Subcarriers Allocation Scheme for Cognitive Radio Systems Based on Multi-Carrier Modulation

Cognitive radio (CR) is a dynamic spectrum access technology as a solution to spectrum under-utilization problem in some licensed bands. Operating over an exceedingly wide spectrum, CR systems usually adopt multi-carrier modulation (MCM) to implement flexible channelization. Consequently, efficient channel allocation scheme becomes extremely important to an MCM based CR (MCM-CR) system. In this paper, a maximum likelihood detection model is developed to detect the presence and locations of licensed users (LUs) signals in the frequency domain. Performance of the detection model, including the optimal detection region, detection probability and false alarm probability, is analyzed. A one-order two-state Markovian chain model is proposed to predict channel status information. In particular, a novel subcarrier allocation scheme for MCM-CR systems is proposed, taking into account the confidence of channel estimation, quality of services (QoS) of rental users (RUs) and throughput. To validate the analytical results, simulations have been conducted to show effectiveness of the proposed scheme.     

Degradation of ZnS:Cu,Al,Au phosphor powder in different gas mixtures

The ZnS:Cu,Al,Au (P22G) phosphor powder was bombarded by an electron beam in an O₂ ambient, Ar ambient and other mixture of gases. These gases consisted of mixtures of O₂ and CO_x, and O₂, CO_x and Ar gas. Auger electron spectroscopy (AES) was used to monitor changes in the surface composition of the P22G phosphor during electron bombardment. When the P22G phosphor powder was exposed to the electron beam in a water-rich O₂ ambient, a chemically limited ZnO layer was formed on the surface. The electron beam degradation of the P22G phosphor powder was also performed in a dry O₂ ambient and a layer of ZnSO₄ was formed on the surface. The ZnSO₄ formation decayed exponentially with time and it is postulated that this was due to the diffusion of the charge reactants through the ZnSO₄ film to the reaction interfaces. The P22G phosphor exposed to the electron beam in an Ar ambient and to the other gas mixtures degraded at a lower rate than in the case of the O₂ ambient. This suggests that Ar and CO_x may suppress the degradation of the P22G phosphor powder.     

单圈图的最大特征值序

主要讨论了单圈图按其最大特征值进行排序的问题，确定了该序的前六个图。     

Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.