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101.
Chen W.L. Munns G.O. East J.R. Haddad G.I. 《Electron Devices, IEEE Transactions on》1994,41(2):155-161
InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In0.75Ga0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz 相似文献
102.
Load-capacity interference and the bathtub curve 总被引:1,自引:0,他引:1
Load-capacity (stress-strength) interference theory is used to derive a heuristic failure rate for an item subjected to repetitive loading which is Poisson distributed in time. Numerical calculations are performed using Gaussian distributions in load and capacity. Infant mortality, constant failure rate (Poisson failures), and aging are shown to be associated with capacity variability, load variability, and capacity deterioration, respectively. Bathtub-shaped failure rate curves are obtained when all three failure types are present. Changes in load or capacity distribution parameters often strongly affect the quantitative behavior of the failure-rate curves, but they do not affect the qualitative behavior of the bathtub curve. Neither is it likely that the qualitative behavior will be affected by the use of nonGaussian distributions. The numerical results, however, indicate that infant mortality and wear-out failures interact strongly with load variability. Thus bathtub curves arising from this model cannot be represented as simple superpositions of independent contributions from the three failure types. Only if the three failure types arise from independent failure mechanisms or in different components is it legitimate simply to sum the failure rate contributions 相似文献
103.
Tamal Bose M. -Q. Chen David A. Trautman 《Circuits, Systems, and Signal Processing》1994,13(5):601-614
A special class of complex biquad digital filters called orthogonal filters are investigated for stability under two's complement
quantization. A sufficient condition is derived for the asymptotic stability of the nonlinear filter. Bounds on the possible
limit cycles are also obtained. Using these bounds, any given filter can be tested for stability. The stability triangle is
then scanned using a dense grid, and each point on the grid is tested for stability/limit cycles. By this method, the stability
region given by the sufficient condition is extended. Regions within the linear stability triangle where various types of
limit cycles are possible are also identified. 相似文献
104.
Mingcho Wu Yung Jui Chen 《Lightwave Technology, Journal of》1994,12(11):1939-1942
Design issues of photonic integrated devices for WDM applications based on Rowland circle gratings have been studied. Effects of grating period, diffraction order, grating aperture (size), and Rowland circle size on device performance are discussed. The point spread function of a typical Rowland circle grating is evaluated numerically which yields an optical image (spot) size of several microns in diameter. Our study shows that there is a tradeoff between channel dispersion and feedback efficiency in choosing the grating period when a Rowland circle grating is used as the wavelength-selective element for a parallel-waveguide-type wavelength division multiplexing device 相似文献
105.
The impacts of CVD tungsten polycide (WSix) on MOSFET performance and reliability are studied in this letter. The WSix process is shown to enhance the S/D lateral extent for both N- and P-channel devices via CGD and Leff measurements, confirming previous suspicion. This enhanced S/D extent is found to be easily modulated by drain-to-gate bias, which is favorable for achieving both higher drive currents and higher S/D punch-through voltages than those of non-WSix devices. Both electron and hole mobility for the WSix device are also slightly higher and closer to the published data compared to the non-WSix case. These effects together yield about >5% improvement for nMOSFET and >10% improvement for pMOSFET in drive current at a given punch-through voltage. The channel hot-electron lifetime for the n-channel WSix device is about 10 times higher than that of the non-WSix one. These enhancements in both performance and reliability make the WSix device very attractive fog VLSI CMOS technologies 相似文献
106.
本文介绍了系统信息提示的一种方法,井重点讨论了用8088汇编语言实现的方法。它采用基本信息串表和索引表,对于使用频度较高的系统,可以大大节约系统内存,具存较好的实性用。 相似文献
107.
Biao Chen Jianping Wang 《Selected Areas in Communications, IEEE Journal on》2003,21(7):1071-1080
One promising switching technology for wavelength-division multiplexing optical networks is optical burst switching (OBS). However, there are major deficiencies of OBS. (1) The delay offset between a control message and its corresponding data burst is based on the diameter of a network. This affects network efficiency, quality-of-service, and network scalability.( 2) OBS adopts one-way resource reservation scheme, which causes frequent burst collision and, thus, burst loss. We address the above two important issues in OBS. In particular, we study how to improve the performance of delay and loss in OBS. To reduce the end-to-end delay, we propose a hybrid switching scheme. The hybrid switching is a combination of lightpath switching and OBS switching. A virtual topology design algorithm based on simulated annealing to minimize the longest shortest path through the virtual topology is presented. To minimize burst collision and loss, we propose a new routing algorithm, namely, p-routing, for OBS network. The p-routing is based on the wavelength available probability. A path that has higher available probability is less likely to drop bursts due to collision. The probability-based p-routing can reduce the volatility, randomness, and uncertainty of one-way resource reservation. Our studies show that hybrid switching and p-routing are complementary and both can dramatically improve the performance of OBS networks. 相似文献
108.
Guantao Chen Ronald J. Gould Michael S. Jacobson Richard H. Schelp 《Journal of Graph Theory》1994,18(7):663-672
For several years, the study of neighborhood unions of graphs has given rise to important structural consequences of graphs. In particular, neighborhood conditions that give rise to hamiltonian cycles have been considered in depth. In this paper we generalize these approaches to give a bound on the smallest number of cycles in G containing all the vertices of G. We show that if for all x, y ? V(G), |N(x) ∩ N(y)| ≧ 2n/5 + 1, then V(G) is coverable by at most two cycles. Several related results and extensions to t cycles are also given. 相似文献
109.
Yuanning Chen Myricks R. Decker M. Liu J. Higashi G.S. 《Electron Device Letters, IEEE》2003,24(5):295-297
As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology. 相似文献
110.