全文获取类型
收费全文 | 91484篇 |
免费 | 12071篇 |
国内免费 | 8771篇 |
专业分类
化学 | 46918篇 |
晶体学 | 661篇 |
力学 | 4662篇 |
综合类 | 515篇 |
数学 | 8449篇 |
物理学 | 25614篇 |
无线电 | 25507篇 |
出版年
2024年 | 367篇 |
2023年 | 2112篇 |
2022年 | 2610篇 |
2021年 | 3216篇 |
2020年 | 3128篇 |
2019年 | 2948篇 |
2018年 | 2610篇 |
2017年 | 2430篇 |
2016年 | 3546篇 |
2015年 | 3841篇 |
2014年 | 4597篇 |
2013年 | 6014篇 |
2012年 | 7130篇 |
2011年 | 7278篇 |
2010年 | 5246篇 |
2009年 | 5276篇 |
2008年 | 5561篇 |
2007年 | 5099篇 |
2006年 | 4905篇 |
2005年 | 4276篇 |
2004年 | 3267篇 |
2003年 | 2669篇 |
2002年 | 2354篇 |
2001年 | 2087篇 |
2000年 | 2030篇 |
1999年 | 2178篇 |
1998年 | 1929篇 |
1997年 | 1660篇 |
1996年 | 1668篇 |
1995年 | 1499篇 |
1994年 | 1346篇 |
1993年 | 1187篇 |
1992年 | 1054篇 |
1991年 | 891篇 |
1990年 | 721篇 |
1989年 | 587篇 |
1988年 | 470篇 |
1987年 | 392篇 |
1986年 | 344篇 |
1985年 | 334篇 |
1984年 | 235篇 |
1983年 | 202篇 |
1982年 | 169篇 |
1981年 | 125篇 |
1980年 | 91篇 |
1979年 | 64篇 |
1978年 | 62篇 |
1976年 | 60篇 |
1975年 | 61篇 |
1973年 | 67篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
41.
Shiao-Shien Chen Tung-Yang Chen Tien-Hao Tang Jin-Lian Su Tzer-Min Shen Jen-Kon Chen 《Electron Devices, IEEE Transactions on》2003,50(7):1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs. 相似文献
42.
43.
针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题,详细介绍了目前几种主流的虚拟专用网(VPN)技术,并进行分析比较,最后提出了运营商内部数据通信网的VPN解决方案。 相似文献
44.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
45.
Hao Wang Ying Lin Biao Chen 《Signal Processing, IEEE Transactions on》2003,51(10):2613-2623
We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms. 相似文献
46.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
47.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
48.
An adaptive p-persistent MAC scheme for multimedia WLAN 总被引:1,自引:0,他引:1
Chih-Ming Yen Chung-Ju Chang Yih-Shen Chen 《Communications Letters, IEEE》2006,10(11):737-739
The letter proposes an adaptive p-persistent-based (APP) medium access control (MAC) scheme for the IEEE 802.11e distributed WLAN supporting multimedia services. The APP MAC scheme adaptively gives differentiated permission probabilities to transmission stations which are in different access category and with various waiting delay. Simulation results show that the APP MAC scheme can improve the performance of multimedia WLAN, such as small voice packet dropping probability, low delay variation, and high system throughput, compared to conventional MAC algorithms 相似文献
49.
In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts. 相似文献
50.
N.S. Chen S.F. Yu 《Photonics Technology Letters, IEEE》2004,16(7):1610-1612
The effect of external optical feedback on the transient response of antiresonant reflecting optical waveguide (ARROW) vertical-cavity surface-emitting lasers (VCSELs) is studied. It can be shown that the proper design of ARROW can suppress the excitation of high-order transverse leaky mode as well as increase the critical feedback strength so that stable high-power single-mode operation of VCSELs can be obtained even under the influence of strong external optical feedback. 相似文献