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101.
Hsin-Li Chen Ching-Yuan Wu 《Electron Devices, IEEE Transactions on》1998,45(10):2245-2247
An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range 相似文献
102.
介绍了高可靠电镀Ni/Au工艺在PTFE微波印制电路上的应用,并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ni/Au镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比,在软基材PTFE敷铜箔板上镀Ni/Au工艺能大大提高微波电路的可焊性,高温稳定性和长期可靠性,并且用其所制作的微波器件的高频性能也优于直接镀金工业。 相似文献
103.
X波段及DBS接收用PHEMT单片低噪声放大器 总被引:3,自引:0,他引:3
报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计,设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中,开展了关键工艺的专题研究。研究结果为:单级单片放大器在10:5-11.6GHz范围内,NF≤1.82dB,G≥7.72dB;在11.7-12.2GHz范围内,NF≤1.80dB,G≥6.8dB;双级放大器在10.4-11.1GHz范围内,NF≤1.96dB,G≥15.3dB,最低噪声系数为1.63dB,最高增益为16.07dB。 相似文献
104.
The moment method is used to calculate electromagnetic backscattering from one-dimensionally rough surfaces at near-grazing incidence (angles of incidence up to 89°). A periodic representation of the scattering surface is used to prevent edge effects in the calculated scattering without the use of an artificial illumination weighting function. A set of universal series common to all elements of the moment interaction matrix are derived that allow the efficient application of the moment method to the periodic surface. Comparison with other moment method implementations demonstrates the efficiency of this approach. The scattering from surfaces with Gaussian roughness spectra is calculated at both horizontal and vertical polarizations, and the results are compared with the theoretical predictions of the small-perturbation method (SPM) and Kirchhoff approximation (KA). SPM shows the expected loss of accuracy in predicting the vertically polarized backscattering from small-roughness, short-correlation-length surfaces at large incidence angles. SPM accurately predicts the backscattering from the same type of surface at incidence up to 89° at horizontal polarization, KA provides accurate estimates of the scattering from long correlation-length surfaces as long as the incidence angle is small enough that surface self-shadowing does not occur. When shadowing occurs, KA severely underpredicts vertically polarized backscattering and less severely overpredicts backscattering at horizontal polarization 相似文献
105.
Feding Ge Jing Zhu Limin Chen 《Journal of Infrared, Millimeter and Terahertz Waves》1996,17(2):449-455
The effective parameters of chiral composite are studied using a simple model, that is, randomly oriented non-interacting wire helices embedded in a nonchiral host medium. It is found that both the effective permittivity ? and permeability μ are independent on the handedness of the chiral objects while the effective chirality admittance ξ is dependent. It is also found that when the ratio of the radius of the chiral helix to its pitch is about 0.23, maximum chirality admittance is achieved. The effective parameters of equichiral sample are also discussed. 相似文献
106.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs) 相似文献
107.
ATM技术能否在数据通信网中广泛采用取决于其是否能高效地支持现有业务,其中主要为非连接业务。本文介绍了几种基于ATM 的非连接业务支持方式和协议体系结构,对其进行了评述并对IP分组到ATM信元的封装效率进行了分析。 相似文献
108.
M.-K. Chen 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2002,21(1):13-18
We examine the influence of relativistic and QED effects on the existence of the 1,3P
o
H- resonances between n
= 2 and 3 hydrogen thresholds, the relativistic and QED corrections and the coupling effects between the high singlet and triplet
states are considered as first-order perturbations. We firstly obtain accurate non-relativistic resonant energies and widths
of fifteen 1P
o
resonances, and fifteen 3P
o
resonances. The fifteen 1P
o
resonances are classified to be
3
(2, 0)
-
n
( 4 ?
n
? 12) and
3
(1, 1)
+
n
( 3 ?
n
? 8). The fifteen 3P
o
resonances are classified to be
3
(2, 0)
+
n
( 3 ?
n
? 12) and
3
(1, 1)
-
n
( 4 ?
n
? 8). We found there exist six Feshbach resonances for
3
(2, 0)
-
n
(1P
o
) series, four Feshbach resonances for
3
(1, 1)
+
n
(1P
o
) series, seven Feshbach resonances for
3
(2, 0)
+
n
(3P
o
) series, and three Feshbach resonances for
3
(1, 1)
-
n
(1P
o
) series.
Received 22 February 2002 Published online 24 September 2002 相似文献
109.
The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed 相似文献
110.
将空气中烧成的镍导体用于散热制冷片制作工艺中,可降低成本,提高合格率。通过实验得到的最佳值为:镍导体中4号玻璃(SiO2>30,B2O3>10,PbO<55,TiO2少许)的含量4.5%,化学镀镍时间50min,方阻47.5mΩ/□,附着力8.1N/mm2。 相似文献