布里奇曼法生长碲镉汞晶体的固液界面形态研究

文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果，简单讨论了固液界面形态对组分分布的影响，并将两种技术所得的组分分布结果进行了比较，在分析影响固液界面形态因素的基础上，认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

Effective electromagnetic and chiral parameters of chiral composite material

The effective parameters of chiral composite are studied using a simple model, that is, randomly oriented non-interacting wire helices embedded in a nonchiral host medium. It is found that both the effective permittivity ? and permeability μ are independent on the handedness of the chiral objects while the effective chirality admittance ξ is dependent. It is also found that when the ratio of the radius of the chiral helix to its pitch is about 0.23, maximum chirality admittance is achieved. The effective parameters of equichiral sample are also discussed.     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

基于ATM的网络互连方式

ＡＴＭ技术能否在数据通信网中广泛采用取决于其是否能高效地支持现有业务，其中主要为非连接业务。本文介绍了几种基于ＡＴＭ 的非连接业务支持方式和协议体系结构，对其进行了评述并对ＩＰ分组到ＡＴＭ信元的封装效率进行了分析。     

On the existence of <Emphasis Type="Bold">1, 3</Emphasis>P <Emphasis Type="Bold">o</Emphasis> resonances in H<Superscript>-</Superscript> between n = 2 and 3 H thresholds

We examine the influence of relativistic and QED effects on the existence of the ^1,3P ^o H^- resonances between n = 2 and 3 hydrogen thresholds, the relativistic and QED corrections and the coupling effects between the high singlet and triplet states are considered as first-order perturbations. We firstly obtain accurate non-relativistic resonant energies and widths of fifteen ¹P ^o resonances, and fifteen ³P ^o resonances. The fifteen ¹P ^o resonances are classified to be ₃ (2, 0) ^- _n ( 4 ? n ? 12) and ₃ (1, 1) ⁺ _n ( 3 ? n ? 8). The fifteen ³P ^o resonances are classified to be ₃ (2, 0) ⁺ _n ( 3 ? n ? 12) and ₃ (1, 1) ^- _n ( 4 ? n ? 8). We found there exist six Feshbach resonances for ₃ (2, 0) ^- _n (¹P ^o ) series, four Feshbach resonances for ₃ (1, 1) ⁺ _n (¹P ^o ) series, seven Feshbach resonances for ₃ (2, 0) ⁺ _n (³P ^o ) series, and three Feshbach resonances for ₃ (1, 1) ^- _n (¹P ^o ) series. Received 22 February 2002 Published online 24 September 2002     

The relation between luminous properties and oxygen content inZnS:TbOF thin-film electroluminescent devices fabricated byradio-frequency magnetron sputtering method

The purpose of this paper is to study the relationship between the oxygen concentration and brightness degradation in ZnS:TbOF green thin-film electroluminescent (EL) devices. The characteristics including crystallinity, optical, and electrical properties were discussed. The brightness-voltage (B-V) measurement results shelved that with higher oxygen-content in ZnS:TbOF phosphor layer, lower brightness was measured. It was consistent with the poor crystallinity, worse photoluminescent intensity, and easier to get moisture in the oxygen-rich (O/Tb>1) phosphor film. Furthermore, deep level transient spectroscopy (DLTS) measurements identified that when the O/Tb ratio was greater than 1, the oxygen-related deep hole traps E_H1 and/or E_H2 could be detected in the ZnS:TbOF phosphor layer. These E _H1 and/or E_H2 traps were believed to be the main killers for the brightness of the device since they capture most of the holes from the generated electron-hole pairs. This evidence strongly supports that the modified energy transfer model is more dominant than direct impact excitation during the luminescent process     

Multidimensional augmented current equation including velocityovershoot

The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed     

光孤子相互作用对压缩态的影响

在线性近似条件下，量子化了非线性薛定谔方程，用后向传播法数值求解了光孤子相互作用对压缩比的影响。数值结果表明，在碰撞距离附近，压缩比显著增加。