BioFET sensor for detection of albumin in urine

Characterisation of a BioFET for detection of albumin in a mixture of human urine is presented. To avoid electrolyte effect of the urine, it was measured in PBS (phosphate buffer saline) at a fixed pH after albumin binding. The drain current was modulated by the albumin bound to the anti-albumin immobilised on the gate surface of the BioFET. The current variation ratio was likely to be proportional to the concentration of the albumin in the range 50-250 mg/1. The results show the feasibility of the BioFET as a urinary albumin sensor.     

Studies on calcium‐containing poly(urethane ether)s

The calcium salt of mono(hydroxyethoxyethyl)phthalate [Ca(HEEP)₂] was synthesized by the reaction of diethylene glycol, phthalic anhydride, and calcium acetate. Calcium‐containing poly(urethane ether)s (PUEs) were synthesized by the reaction of hexamethylene diisocyanate (HMDI) or tolylene 2,4‐diisocyanate (TDI) with a mixture of Ca(HEEP)₂ and poly(ethylene glycol) (PEG₃₀₀ or PEG₄₀₀) with di‐n‐butyltin dilaurate as a catalyst. A series of calcium‐containing PUEs of different compositions were synthesized with Ca(HEEP)₂/PEG₃₀₀ (or PEG₄₀₀)/diisocyanate (HMDI or TDI) molar ratios of 2:2:4, 3:1:4, and 1:3:4 so that the coating properties of the PUEs could be studied. Blank PUEs without calcium‐containing ionic diols were also prepared by the reaction of PEG₃₀₀ or PEG₄₀₀ with HMDI or TDI. The PUEs were well characterized by Fourier transform infrared, ¹H and ¹³C NMR, solid‐state cross‐polarity/magic‐angle‐spinning ¹³C NMR, viscosity, solubility, and X‐ray diffraction studies. The thermal properties of the polymers were also studied with thermogravimetric analysis and differential scanning calorimetry. The PUEs were applied as top coats on acrylic‐coated leather, and their physicomechanical properties were also studied. The coating properties of PUEs, such as the tensile strength, elongation at break, tear strength, water vapor permeability, flexing endurance, cold crack resistance, abrasion resistance, color fastness, and adhesive strength, were better than the standard values. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 2865–2878, 2003     

Determination of carbamazepine by chemiluminescence detection using chemically prepared tris(2,2'-bipyridine)ruthenium(III) as oxidant.

A new chemiluminescence method for the determination of carbamazepine (CBZ) has been developed. The method is based on the chemiluminescence produced in the reaction of tris(2,2'-bipyridine)ruthenium(III) and CBZ in an acidic medium. The chemiluminescence intensity was enhanced by organic solvents in the reaction system. Under the optimum experimental conditions, the calibration curve was linear over the range 4.0 x 10(-3)-8.6 x 10(-7) mol/L for CBZ. The detection limit (S/N = 3) was 2.5 x 10(-7) mol/L and the relative standard deviation of six replicate measurements was 2.6% for 4.0 x 10(-4) mol/L of CBZ. The possible reaction mechanism were also discussed. The chemiluminescence method was successfully applied to assay the CBZ contents in pharmaceutical tablets.     

Investigation of the Li1+xV3O8 electrode–organic electrolyte interface by scanning photoelectron microscopy

To investigate the formation of a solid electrolyte interface (SEI) on the Li_1+xV₃O₈ electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li_1+xV₃O₈/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous.     

Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators

An InGaAsP slab-type asymmetric-coupled-waveguide-based dispersion compensator with a mode selector has been designed and fabricated. The mode selector is necessary to select either a symmetric [with a positive group-velocity dispersion (GVD)] or antisymmetric (with a negative GVD) supermode. These supermodes exist simultaneously in the dispersion-compensation region of the device. Pulse-compression experiments were used to test the dispersion compensator, evaluating the function of the mode selector. A theoretical study of the experimental results shows that the mode selector obtains a very strong selectivity (nearly 100%) for the antisymmetric supermode.     

Foveation-Based Error Resilience and Unequal Error Protection over Mobile Networks

By exploiting new human-machine interface techniques, such as visual eyetrackers, it should be possible to develop more efficient visual multimedia services associated with low bandwidth, dynamic channel adaptation and robust visual data transmission. In this paper, we introduce foveation-based error resilience and unequal error protection techniques over highly error-prone mobile networks. Each frame is spatially divided into foveated and background layers according to perceptual importance. Perceptual importance is determined either through an eye tracker or by manually selecting a region of interest. We attempt to improve reconstructed visual quality by maintaining the high visual source throughput of the foveated layer using foveation-based error resilience and error correction using a combination of turbo codes and ARQ (automatic reQuest). In order to alleviate the degradation of visual quality, a foveation based bitstream partitioning is developed. In an effort to increase the source throughput of the foveated layer, we develop unequal delay-constrained ARQ (automatic reQuest) and rate compatible punctured turbo codes where the punctual pattern of RCPC (rate compatible punctured convolutional) codes in H.223 Annex C is used. In the simulation, the visual quality is significantly increased in the area of interest using foveation-based error resilience and unequal error protection; (as much as 3 dB FPSNR (foveal peak signal to noise ratio) improvement) at 40% packet error rate. Over real-fading statistics measured in the downtown area of Austin, Texas, the visual quality is increased up to 1.5 dB in PSNR and 1.8 dB in FPSNR at a channel SNR of 5 dB.     

多粒度全光网中的多层联合路由

多粒度交换技术利用波带级路由以及光纤级路由,可有效降低光交叉连接器的复杂度.但多粒度交换增加了光网络的逻辑层次结构,使得网络中的路由与资源分配问题更为复杂,因此,在多粒度全光网中实现多层联合路由是提高网络性能的关键.本文对多粒度交叉连接结构进行了分析,并对多粒度全光网中的多层联合路由问题进行了研究.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.