A modification to the Peng–Robinson-fitted equation of state for pure substances

In this work we present two modifications to the Peng–Robinson-Fitted equation of state where pure component parameters are regressed to vapor pressure and saturated liquid density data. The first modification (PR-f-mod) is a method that enhances the equation of state pure component property predictions through simple temperature dependent pure component parameters. In the second modification (PR-f-prop) we propose a temperature dependency for co-volume b in the repulsive parameter of the EoS, and revise the temperature function in the attractive term. The agreement with experimental data for 72 pure substances, including highly polar compounds, is remarkably good. We obtain average absolute deviations in saturated liquid density of less than 1% for all substances studied.     

ICP－AES法测定钨酸钇钾激光晶体中的Er和Nd

应用ＩＣＰ－ＡＥＳ法测定钨酸钇钾［ｋＹ（ＷＯ４）２］激光晶体中的Ｅｒ和Ｎｄ。试样用磷酸分解，Ｔｍ被选作内标元素。Ｅｒ和Ｎｄ的回收率分别为９８．６％－１０５．３％和９６．５％－１０５．８％，相对标准偏差分别为１．９０％和１．６０％。     

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.