A fast iterated conditional modes algorithm for water-fat decomposition in MRI

Decomposition of water and fat in magnetic resonance imaging (MRI) is important for biomedical research and clinical applications. In this paper, we propose a two-phased approach for the three-point water-fat decomposition problem. Our contribution consists of two components: 1) a background-masked Markov random field (MRF) energy model to formulate the local smoothness of field inhomogeneity; 2) a new iterated conditional modes (ICM) algorithm accounting for high-performance optimization of the MRF energy model. The MRF energy model is integrated with background masking to prevent error propagation of background estimates as well as improve efficiency. The central component of our new ICM algorithm is the stability tracking (ST) mechanism intended to dynamically track iterative stability on pixels so that computation per iteration is performed only on instable pixels. The ST mechanism significantly improves the efficiency of ICM. We also develop a median-based initialization algorithm to provide good initial guesses for ICM iterations, and an adaptive gradient-based scheme for parametric configuration of the MRF model. We evaluate the robust of our approach with high-resolution mouse datasets acquired from 7T MRI.     

太阳能冷管的研究进展及应用前景

太阳能冷管是根据固体吸附原理,利用太阳辐射在单根冷管内完成脱附和吸附循环的独立制冷单元。作为一种新型单元式微型化的制冷器件,太阳能冷管及其应用研究是吸附制冷研究领域中的一个重要方面。介绍太阳能冷管国内外的总体研究进展,并对吸附式冷管技术的未来研究和应用前景作了展望。     

压印技术制备超高密度Si_2Sb_2Te_5基相变存储阵列

采用低成本、高效率的压印技术实现了高密度相变存储器(PCRAM)存储阵列的制备,开发出Si2Sb2Te5(SST)新材料的4Gbit/inch2存储阵列,存储单元面积为0.04μm2;利用SEM观测压印获得的光刻胶图形阵列以及刻蚀后的SST存储阵列,其单元外形均具有高度的一致性,且单元特征尺寸的3倍标准差均小于6nm;利用AFM研究了SST存储单元的I-V特性,阈值电压为1.56V,高、低电阻态阻值变化超过两个数量级。实验结果表明了SST新材料及压印技术在PCRAM芯片中的应用价值。     

密钥托管技术分析

介绍了密钥托管的定义、分类和使用以及美国密钥托管标准,分析了密钥托管的几种方法,认为芯片的防拆性和公钥密码在密钥托管中起很好的作用。     

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

Rhenium disulfide (ReS₂) is a two‐dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer‐independent electrical and optical properties, and metal‐free magnetism properties. These properties are unusual compared with more widely used group VI‐TMDs, e.g., MoS₂, MoSe₂, WS₂ and WSe₂. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS₂ has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond. Therefore, a review on ReS₂ is very timely. In this first review on ReS₂, we critically analyze the available synthesis procedures and their pros/cons, atomic structure and lattice symmetry, crystal structure, and growth mechanisms with an insight into the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical, and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and contemporary applications in different areas.     

RFID读写器的PS/2接口设计

随着物联网的兴起,RFID技术受到了前所未有的重视。而现在应用于各个频段的RFID读写器,一般都需要与PC机连接才能工作。为了实现控制的目的,必须在计算机上为其安装不同的上位机驱动程序。不能即插即用很大程度上限制了RFID读写器的应用。基于上述考虑,该文利用操作系统内一般都集成有PS/2协议驱动,开发设计了基于PS/2的RFID读写器无驱动模块,实现了读写器即插即用的功能。并且考虑到目前很多计算机都不支持PS/2接口,利用OKE122-U转换芯片将实现的PS/2接口转换为USB接口。该文首先对PS/2接口作了简要介绍,对PS/2协议时序做了详细说明,并给出了硬件连接电路和软件设计过程,最后提供了读写器与主机通信时利用示波器抓取到的信号。     

应变Sil-xGex/Si △i能谷附近色散关系的KP理论推导

基于对称性分析,应用KP微扰理论确定了应变Si1-xGex(0≤x<0.45)/(001),(111),(101)Si的△i能谷附近的色散关系.结果证明:应变Si1-xGx中的△i能级大小不同于弛豫Si-xGex的△1能级,而二者的横向、纵向有效质量(m*l,m*t)相同.△i和△1能级之差由形变势理论确定.最后,描述了双轴应变下外延层材料的导带带边特征.     

干涉SAR成像中地形高度估计及基线估计方法的研究

本文在地形高度估计及基线估计等方面作了一些研究,提出了一种ＳＡＲ成像地形高度估计方法和一种基线估计方法。本文首先讲述了如何将干涉相位差转换成地形高的方法。通过模拟实验分析了地球的曲面效应对星载ＳＡＲ地形高度估计的影响．利用该方法能提高高度估计精度并且不需考虑去除平地效应。本文还给出了一种利用地面定标点估计基线参数的方法,通过模拟实验表明,在一定条件下我们能得到比较满意的结果。     

Ni(Zr)Si薄膜热稳定性及其肖特基势垒二极管的电学特性

提出在Ni中掺入夹层Zr的方法来提高NiSi的热稳定性．具有此结构的薄膜,600～800℃快速热退火后,薄层电阻保持较低值,小于2Ω/□．经XRD和Raman光谱分析表明,薄膜中只存在低阻NiSi相,而没有高阻NiSi2相生成．Ni(Zr)Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺Zr的镍硅化物的转变温度上限提高了100℃．Ni(Zr)Si/Si肖特基势垒二极管能够经受650～800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.63eV,理想因子接近于1．     

SnO2‐C60 Pyrrolidine Tris‐Acid (CPTA) as the Electron Transport Layer for Highly Efficient and Stable Planar Sn‐Based Perovskite Solar Cells

For solar cell applications, Sn‐based hybrid perovskites have drawn particular interest due to their environmental friendliness. Here, a thin layer of C₆₀ pyrrolidine tris‐acid (CPTA) is found essential for achieving high efficiency with planar solar cells of Sn‐based perovskites. As a result, a power conversion efficiency of 7.40% is achieved for {en}FASnI₃ solar cells with a planar n–i–p architecture, and the device exhibits excellent stability in air. For the first time, highly efficient Sn‐based hybrid perovskite solar cells on n–i–p architecture are achieved. A V_oc of 0.72 V is highlighted as the highest V_oc ever reported for FASnI₃ solar cells.