化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

半绝缘砷化镓中碳含量对热稳定性的影响

本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10~(16)cm~(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10~(15)cm~(-3)时,通常表现出良好的热稳定性。     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage     

光外差系统噪声等效功率的一种测量方法

本文介绍了利用工作于Bragg衍射的Ge晶体声光调制器作为外差系统中的频移器来测量外差系统的噪声等效功率(NEP)的方法。该方法具有测试系统简单、信号光功率、偏频可调的优点。实验测试与理论分析吻合。     

Generalized KKM Type Theorems in FC-Spaces with Applications (I)

The class KKM(X,Y) (resp., s-KKM(X,Y,Z)) of set-valued mappings with KKM (resp., s-KKM) property is introduced in FC-spaces without any convexity structure. Some generalized KKM (resp., s-KKM) type theorems are proved in FC-spaces under much weak assumptions. As applications, some new section theorems and coincidence theorems are established in FC-spaces. These theorems generalize many known results in literature. The further applications of these results will be given in a follow-up paper.     

含有五边形—七边形缺陷的单壁纳米碳管的输运性质研究

运用第一性原理的密度泛函理论结合非平衡格林函数研究了含有五边形—七边形拓扑缺陷的纳米碳管异质结的输运性质.结果发现：拓扑缺陷对碳管的输运性质有很大影响；另外，不同类型的碳管形成的异质结的输运性质也有明显的差异. 关键词： 纳米碳管 输运性质 异质结 透射系数     

拉长截面等离子体垂直位移不稳定性及其动力稳定

本文研究了拉长截面Tokamak上等离子体的垂直位移不稳定性。计算表明,其快速振荡部分由周围导体中感生的涡流稳定;其慢速漂移部分则需由主动稳定系统予以控制。本文提出一种动力稳定的方法。它在物理上是可行的,并具有技术上简单、较低的功率要求及有利的频率效应等优点。这些说明,这种动力控制方法是一种有吸引力的控制垂直位移不稳定性的手段。     

偏振模色散统计特性的研究

利用动态方程研究了偏振模色散矢量的统计特性 ,分别用统计系综和频率系综两种方法进行数值模拟。数值结果表明 ,统计系综和频率系综两种方法的结果一致。在大归一化距离条件下 ,均方根时延的平方随归一化距离线性变化 ;偏振模色散矢量的各个分量服从高斯分布 ,差分群时延服从麦克斯韦分布 ;偏振模色散矢量弥散于整个邦加球     

全封离式低,中功率CO2激光器

本文回顾了过去十年来封离CO_2激光器使用射频(RF)激发技术方面的进展,并讨论了这一技术现状以及技术与市场的挑战。