低压宽温高频铝电解电容器工作电解液

在传统的己二酸铵/乙二醇加水体系中,通过增加水的含量实现高电导率,同时在电解液中添加多种有机高分子物质形成复合添加剂,改善工作电解液的高温稳定性,使电容器上限工作温度扩展到105℃,形成高频宽温低阻抗工作电解液。     

在SQUID心磁测量中基于奇异值分解和自适应滤波的噪声消除法

采用矩阵奇异值分解(singular value decomposition, SVD)的方法，对高温射频超导量子干涉仪(HTc rf-SQUID)采集到的单通道心磁信号进行处理.证明了对于近似周期性的心磁信号，在无参考噪声的情况下矩阵奇异值分解的方法与自适应窄带陷波相结合有较好的消除广谱噪声的效果. 关键词： 高温射频超导量子干涉仪 心磁信号 奇异值分解 噪声消除     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

移动消息类业务的发展演进趋势分析

随着国内外SMS业务的巨大成功，移动消息类业务的市场潜力初步显露，并逐步呈现了SMS与EMS、UMS、MMS、IM等多种不同标准的消息类业务互相竞争的局面。通过对移动消息业业务发展历史的回顾，在对SMS的成功要素与UMS、MMS业务对比分析基础上，探讨了移动消息类业务发展演进趋势。     

Dynamic Survivability in WDM Mesh Networks Under Dynamic Traffic

Network survivability is a crucial requirement in WDM mesh networks. In this paper, we systematically consider the problem of dynamic survivability with dynamic single link failure in WDM networks under dynamic traffic demands. Specifically, we investigate various protection schemes, such as dedicated path protection (DPP), shared path protection (SPP), dedicated link protection (DLP), shared link protection (SLP), and two restoration schemes, path restoration (PR) and link restoration (LR). Moreover, two new shared protection methods are proposed, i.e., SRLG-based shared link protection (SRLG-SLP) and SRLG-based shared path protection (SRLG-SPP). The SRLG (shared risk link group) constraint defines the availability of protection resources to a working path, which requires that any two working paths sharing the same risk of failure (or in the same SRLG) cannot share the same protection resources. Furthermore, in our study, we consider a more practical dynamic single-link failure model, in which the link-failure-interarrival time and link-failure-holding time are considered as two independent parameters. Based on this link-failure model, extensive simulations are done to analyze and compare the dynamic survivable performance of various protection and restoration schemes. Resource utilization, protection efficiency, restoration efficiency, and service disruption ratio are employed as survivable performance metrics versus traffic load, link-failure frequency, and link-failure reparation time to evaluate the survivable performance. Many meaningful results are given. In addition, we show that the developed SRLG-SLP and SRLG-SPP protection schemes perform very well in terms of protection efficiency and service disruption ratio, while sacrificing some performance in terms of resource utilization.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

参数曲面保凸的一个定理

本文讨论了参数曲面的凸性，给出了参数曲面为凸的充要条件．并给出了具体的应用实例．