Enhancement mode InP MISFET's with sulfide passivation andphoto-CVD grown P3N5 gate insulators

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P₃N₅ film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10⁴ seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm ²/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×10¹⁴/cm² eV has been attained     

Ultra-wideband (from DC to 110 GHz) CPW to CPS transition

A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz     

Design of a widely tunable laser with a chirped ladder filter

We theoretically investigated a digitally tunable laser with a chirped ladder filter and a ring resonator to obtain a wide wavelength tuning range covering the whole C- or L- band. The clear relation between the tuning range and laser structure, especially the ladder filter, is described analytically. The introduction of a chirped structure into a ladder filter is effective in achieving both wide tunability and a stable lasing mode. A numerical simulation based on multimode rate equations shows that a tuning range of over 40 nm and a mode suppression ratio over 40 dB can be achieved by introducing a chirped ladder filter.     

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm³ via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.     

Capacitor coupled converter (C3) for high power DCconversion

The bang-bang controlled capacitor coupled converter (C³) is described in this paper. Due to the converter's inherent commutating property, the C³ can accommodate thyristors as well as high-power gate turn-off switches, due to zero-current switching transitions. The zero-current switching is achieved at no current stress increase, therefore, the topology is considered appropriate for high-power processing. DC and small signal AC models are derived for the bang-bang controlled C³, a design procedure is proposed, and simulation results are discussed. Finally, oscillograms from a proof of principle prototype circuit are presented     

The Two-Point Codes with the Designed Distance on a Hermitian Curve in Even Characteristic

In Homma M and Kim SJ [2], the authors considered two-point codes on a Hermitian curve defined over fields of odd characteristic. In this paper, we study the geometry of a Hermitian curve over fields of even characteristic and classify the two-point codes whose minimum distances agree with the designed ones.     

Cyano-bridged CuII-MV (M = Mo, W) bimetallic layered complexes exhibiting novel honeycomblike structures

Self-assembly of a new precursor [Cu(L)](ClO4)2 (1) (L = macrocyclic ligand) with octacyanometalates [M(CN)8]3- (M = Mo, W) produced two-dimensional cyano-bridged Cu(II)-M(V) bimetallic assemblies [Cu(L)]3n[M(CN)8]2n.6nH2O [M = Mo (2), W (3)] with novel honeycomblike structures, characterized by spectroscopic data, single-crystal X-ray diffraction studies, and magnetic measurements. The crystallographic determination reveals that compounds 2 and 3 are isostructural and crystallize in the triclinic system (P). The Cu atom in a distorted octahedral environment experiences a tetragonal elongation of apical nitrogen atoms exhibiting average Cu-Nax lengths of 2.566 Angstroms for 2 and 2.593 Angstroms for 3, which accounts for the Jahn-Teller effect of a Cu(II) ion. The Cu-NC angles are magnetically important, ranging from 135.7 to 159.2 degrees. Three types of L in the crystal lattice are observed, which are dependent on the relative positions of the pendant hydroxyl groups with respect to the CuN4 basal plane. The positions are correlated with hydrogen bonding of OH groups to neighboring atoms. The magnetic data indicate that ferromagnetic and antiferromagnetic interactions between Cu(II) and M(V) through the CN linkage coexist.     

Pore size distributions in low‐k dielectric thin films from X‐ray porosimetry

X‐ray reflectivity has been used to determine the mass uptake of probe molecules in porous thin films supported on thick silicon wafers. The adsorption occurs by capillary condensation when the films are exposed to probe vapor at controlled partial vapor pressures. The probe solvent partial pressure was varied by mixing saturated air and dry air at constant temperature or by changing sample temperature at a constant vapor concentration. Pore size distribution in the films can be calculated from the probe uptake with typical porosimetric approaches such as the application of the Kelvin equation to convert partial pressure into pore size. For illustration, the pore size distribution of three different nanoporous thin films, the primary candidate of ultra‐low‐k interlevel dielectrics in the next generation of integrated circuit chips, was determined with this technique. These samples represent different generations of low‐k dielectrics developed by industry. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2170–2177, 2002