Defect formation in epitaxial oxide dielectric layers due to substrate surface relief

Defects were characterized in epitaxial (001) CeO₂ films deposited and planarizedin situ on patterned (001) LaAlO₃ substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO₃ axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai epitaxial CeO₂ layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam film and the substrate was of the type: (001) CeO₂∥(001) LaAlO₃ and [110] CeO₂∥[100] LaAlO₃. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO₂∥(001)LaAlO₃ and [001] CeO₂∥[001] LaAlO₃ caused formation of dislocations in the e-beam CeO₂ film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO₂ film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed of numerous adjacent ledges in the LaAlO₃ surface, caused nucleation of CeO₂ with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO₂ crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO₂ layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film where epitaxy was maintained throughout both layers.     

一种接入信息高速公路的新技术ADSL

新近出现的非对称数字用户线（ＡＤＳＬ）技术利用用户网中现有的铜双绞线提供１．５～６Ｍｂ／ｓ的下行数字信道，为接入信息高速公路提供了一条新途径，本文首次论述ＡＤＳＬ的基本概念，技术，发展现状和应用，最后论述我们对发展我国ＡＤＳＬ接入设备的几点建议。     

锁相电子散斑系统

电子散斑干涉计量在变形量检测¹、无损探伤、振动分析^(2,3)等领域具有广泛的应用前景,目前它之所以未能实用化,最重要的原因就是该系统对环境的要求过高,特别是物体的振动和空气的扰动对测量结果影响很大,甚至会导致测量失败,因而国内外学者在不断寻找解决此问题的锁相技术。本文提出了一种简易的切实可行的锁相方法-光学锁相法,消除了物体的振动和空气扰动对电子散斑测量的影响。     

Analysis and design of aperture-coupled microstrip patch antennasand arrays fed by dielectric image line

This paper presents the analysis and design of aperture-coupled microstrip patch antennas and arrays fed by an dielectric image line. A theory based on the cavity model of the microstrip patch antenna and the change in the modal voltage of the image line at the aperture was developed to analyze the single element aperture-coupled microstrip patch antenna. The theory developed was combined with the array theory to design linear traveling wave arrays at X-band and Ka-band frequencies. The required taper in the excitations of the individual patches of the array was achieved by varying the aperture dimensions. Experiments show very good results for the antennas and the arrays     

GaInP/GaAs HBTs for high-speed integrated circuit applications

The use of GaInP/GaAs heterojunction bipolar transistors (HBTs) for integrated circuit applications is demonstrated. The discrete devices fabricated showed excellent DC characteristics with low V_ce offset voltage and very low temperature sensitivity of the current gain. For a non-self-aligned device with a 3-μm×1.4-μm emitter area, f_T was extrapolated to 45 GHz and f_max was extrapolated to 70 GHz. The measured 1/f noise level was 20 dB better than that of AlGaAs HBTs and comparable to that of low-noise silicon bipolar junction transistors, and the noise bump (Lorentzian component) was not observed. The fabricated gain block circuits showed 8.5 dB gain with a 3-dB bandwidth of 12 GHz, and static frequency dividers (divide by 4) were operable up to 8 GHz