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71.
72.
Yu. M. Pechatnikov 《Technical Physics》2003,48(12):1522-1526
Transition (molecular-viscous) isothermal channel flow of rarefied gases is considered. Present-day engineering physical models of transition gas flow and methods of simulation are analyzed and verified in terms of the kinetic theory on the micro-and macrolevels. 相似文献
73.
Let Ψ be any adaptive sampling algorithm that can run in real time on a tapeless multichannel electrocardiogram (ECG) Holter system. Simple methods which can significantly improve Ψ's fidelity are described and their results are compared in this paper. It is shown that by adding some simple tests to Ψ, the signals reconstructed by Ψ can be improved as much as 5.45 dB. It is also shown that under the same data rate, a good data compressor with slowly sampled input ECG is preferable to a bad data compressor with highly sampled input ECG 相似文献
74.
本文通过MPEG-2和MPEG-1在视频方面的比较,简略地介绍了MPEG-2视频标准,并附带介绍了C-CUBE公司的MPEG-2视频编码芯片CLM4400的功能和应用前景。 相似文献
75.
Jenghwa Chang Graber H.L. Ping Chen Koo Aronson R. Barbour S.-L.S. Barbour R.L. 《IEEE transactions on medical imaging》1997,16(1):68-77
Presents a model suitable for computing images of absorption cross sections of thick tissue structures illuminated at near infrared (NIR) wavelengths from tomographic projection data. Image reconstruction is accomplished by solving a system of linear equations derived from transport theory. Reconstruction results using different algebraic solvers are shown for anatomical maps of the breast, derived from magnetic resonance imaging data, containing two simulated pathologies, in which case qualitatively good reconstructions were obtained. Evaluation of magnetic resonance (MR) data to optimize NIR optical tomographic imaging methods and to assess the feasibility of a combined MR-optical measurement scheme is discussed 相似文献
76.
77.
Wen-Chau Liu Lih-Wen Laih Shiou-Ying Cheng Wen-Lung Chang Wei-Chou Wang Jing-Yuh Chen Po-Hung Lin 《Electron Devices, IEEE Transactions on》1998,45(2):373-379
In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional InxGa1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications 相似文献
78.
This paper discusses changes in the spectrum and distortion of the electron wave function of a GaAs quantum well when a thin
AlGaAs barrier is introduced into it. The potential difference generated across the quantum well by distortion of the electron
wave function is calculated, along with its dependence on the position of the barrier in the quantum well. The photovoltaic
response of the structure to optical intersubband excitations is also calculated, along with the role of wave function and
electronic spectrum distortion as well as intersubband nonradiative transitions in generating this response. The suitability
of a GaAs quantum well with a thin barrier for use as an infrared detector is considered.
Fiz. Tekh. Poluprovodn. 32, 1246–1250 (October 1998) 相似文献
79.
The characteristic features of the continuous-wave lasing spectra near 3.3 μm of multimode InAsSbP/InAsSb/InAsSbP double-heterostructure
diode lasers are shown. The observation of mode switching to longer and shorter wavelengths at cryogenic temperatures is reported.
It is shown that suppression of the longitudinal side modes closest to the main mode results in large mode jumps in energy
during mode tuning by current. The characteristics which were observed are explained by gain spectrum inhomogeneity due to
spectral hole burning in narrow-gap semiconductors. The intraband charge-carrier relaxation times in the active region are
estimated.
Fiz. Tekh. Poluprovodn. 39, 1139–1144 (September 1998) 相似文献
80.