粒子分辨CCT方法中的δ电子效应

提出了切伦科夫相关时间测量(CCT)中初始粒子在辐射体里产生的δ电子的干扰问题,以及降低干扰的方法. 通过模拟计算给出了北京τ-C工厂探测器初步设计中CCT的π/K分辨本领.     

Configurable nonlinear filter generator

A configurable nonlinear filter generator is proposed. The nonlinear function employed is key controllable. By changing the key, a different sequence will be obtained. Simulated results show that an optimal linear complexity profile of the sequence can be generated     

半导体中多光子吸收跃迁速率的全量子理论分析

本文从非线性光学中辐射跃迁速率的表达式出发,在全量子理论下,导出了半导体中任意阶多光子吸收跃迁速率的一般表达式。理论分析结果表明,n光子吸收跃迁速率与光强的n次方和n阶光子相干度成正比。本文在多能带及二能带理论模型下,对多光子吸收跃迁速率的一般表达式进行了化简,并对非线性相互作用项对跃迁速率的贡献,作了讨论。     

An adaptive morphological filter for image processing

Novel types of opening operator (NOP) and closing operator (NCP) are proposed. An adaptive morphological filter is then constructed on the basis of the NOP and NCP. The filter can remove any details consisting of fewer pixels than a given number N, while preserving the other details. Efficient algorithms are also developed for the implementation of the NOP and NCP.     

New theorems for bianisotropic media

The general volume equivalence theorem for bianisotropic scatterers is presented, where the equivalent electric and magnetic currents are determined by a pair of coupled vector integral equations. Moreover, using the general volume equivalence theorem and conventional image principle, image theory is developed for a bianisotropic body over an infinite perfect electric or magnetic conducting ground plane.     

BAHADUR ASYMPTOTIC EFFICIENCY IN A SEMIPARAMETRIC REGRESSION MODEL

ＢＡＨＡＤＵＲＡＳＹＭＰＴＯＴＩＣＥＦＦＩＣＩＥＮＣＹＩＮＡＳＥＭＩＰＡＲＡＭＥＴＲＩＣＲＥＧＲＥＳＳＩＯＮＭＯＤＥＬ￥ＬＩＡＮＧＨＵＡ；ＣＨＥＮＧＰＩＮＧＡｂｓｔｒａｃｔ：ＴｈｅａｕｔｈｏｒＳｇｉｖｅＭＬＥθ１ＭＬｏｆθ１ｉｎｔｈｅｍｏｄｅｌＹ＝θ...     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

Green dyadic and dipole radiation in triaxial omega medium

A triaxial omega medium, which can be artificially realised by embedding three types of omega-shaped particles in an isotropic host medium, is proposed. The Green dyadic and the electromagnetic field of a dipole radiator are presented, by introducing a set of auxiliary fields and coordinate transformation     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。