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241.
An infinite row of periodically spaced, identical rigid circularcylinders is excited by an acoustic line source which is parallelto the generators of the cylinders. A method for calculatingthe scattered field accurately and efficiently is presented.When the cylinders are sufficiently close together, Rayleigh–Blochsurface waves that propagate energy to infinity along the arrayare excited. An expression is derived which enables the amplitudesof these surface waves to be computed without requiring thesolution to the full scattering problem.  相似文献   
242.
In this paper, we present a waveform converter implemented on a 0.25-μm CMOS technology using a dedicated design methodology (Delay Oriented Design). The circuit converts a square wave signal in both in-phase and quadrature-phase sinusoidal differential outputs. It also multiplies the frequency by seven. The output frequency range of this converter extends from 1.05 GHz up to 2.17 GHz. This converter is dedicated for the design of a third-generation mobile phone synthesizer using a double-loop architecture. For an output frequency of 2 GHz, the measured phase noise at 10-kHz offset from the carrier is -97 dBc/Hz. The circuit consumes 50 mW from a 2.5-V supply  相似文献   
243.
Self broadened widths of seven lines of ozone between 75 and 120 GHz have been measured at room temperature. The variation with temperature of the self-broadening parameter for three of these lines has been studied in the range 245–292°K.  相似文献   
244.
245.
The basic operation of biological and electronic (artificial) neural networks (NNs) is examined. Learning by NNs is discussed, covering supervised learning, particularly back-propagation, and unsupervised and reinforcement learning. The use of VLSI implementation to speed learning is considered briefly. Applications of neural-style learning chips to pattern recognition, data compression, optimization, and expert systems is discussed. Problem areas and issues for further research are addressed  相似文献   
246.
Reductions in overshoot following intense sound exposures   总被引:1,自引:0,他引:1  
Overshoot refers to the poorer detectability of brief signals presented soon after the onset of a masking noise compared to those presented after longer delays. In the present experiment, brief tonal signals were presented 2 or 190 ms following the onset of a broadband masker that was 200 ms in duration. These two conditions of signal delay were tested before and after a series of exposures to a tone intense enough to induce temporary threshold shift (TTS). The magnitude of the overshoot was reduced after the exposure when a TTS of at least 10 dB was induced, but not when smaller amounts of TTS were induced. The reduction in overshoot was due to a decrease in the masked thresholds with the 2-ms delay; masked thresholds with the 190-ms delay were not different pre- and post-exposure. The implication is that the mechanisms responsible for the normal overshoot effect are temporarily inactivated by the same stimulus manipulations that produce a mild exposure-induced hearing loss. Thus the result is the paradox that exposure to intense sounds can produce a loss of signal detectability in certain stimulus conditions and a simultaneous improvement in detectability in other stimulus conditions.  相似文献   
247.
The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.  相似文献   
248.
An optimization design model for surface termination of off-state semiconductor devices under reverse-bias conditions is presented. The multivariable design model is used to optimize the surface profile shapes for nonplanar devices and the doping profiles of material regions along the surface for planar devices. The effectiveness of the design model in reducing the peak surface electric field to below 50% of the bulk value is demonstrated for two examples of each type of device  相似文献   
249.
A Graphene Field-Effect Device   总被引:2,自引:0,他引:2  
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs  相似文献   
250.
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