全文获取类型
收费全文 | 292152篇 |
免费 | 13874篇 |
国内免费 | 9586篇 |
专业分类
化学 | 137625篇 |
晶体学 | 3063篇 |
力学 | 12159篇 |
综合类 | 522篇 |
数学 | 26003篇 |
物理学 | 78176篇 |
无线电 | 58064篇 |
出版年
2023年 | 2517篇 |
2022年 | 3406篇 |
2021年 | 4367篇 |
2020年 | 4309篇 |
2019年 | 4146篇 |
2018年 | 3868篇 |
2017年 | 3694篇 |
2016年 | 6067篇 |
2015年 | 5846篇 |
2014年 | 7297篇 |
2013年 | 14174篇 |
2012年 | 13564篇 |
2011年 | 15389篇 |
2010年 | 10512篇 |
2009年 | 11069篇 |
2008年 | 13801篇 |
2007年 | 13719篇 |
2006年 | 13256篇 |
2005年 | 12138篇 |
2004年 | 10346篇 |
2003年 | 8979篇 |
2002年 | 8428篇 |
2001年 | 9285篇 |
2000年 | 7669篇 |
1999年 | 6726篇 |
1998年 | 5633篇 |
1997年 | 5278篇 |
1996年 | 5221篇 |
1995年 | 4703篇 |
1994年 | 4467篇 |
1993年 | 4238篇 |
1992年 | 4337篇 |
1991年 | 4137篇 |
1990年 | 3618篇 |
1989年 | 3417篇 |
1988年 | 3156篇 |
1987年 | 2664篇 |
1986年 | 2539篇 |
1985年 | 3423篇 |
1984年 | 3284篇 |
1983年 | 2673篇 |
1982年 | 2812篇 |
1981年 | 2639篇 |
1980年 | 2571篇 |
1979年 | 2429篇 |
1978年 | 2510篇 |
1977年 | 2430篇 |
1976年 | 2374篇 |
1975年 | 2346篇 |
1973年 | 2339篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
41.
针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题,详细介绍了目前几种主流的虚拟专用网(VPN)技术,并进行分析比较,最后提出了运营商内部数据通信网的VPN解决方案。 相似文献
42.
On the capacities of bipartite Hamiltonians and unitary gates 总被引:2,自引:0,他引:2
Bennett C.H. Harrow A.W. Leung D.W. Smolin J.A. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(8):1895-1911
We consider interactions as bidirectional channels. We investigate the capacities for interaction Hamiltonians and nonlocal unitary gates to generate entanglement and transmit classical information. We give analytic expressions for the entanglement generating capacity and entanglement-assisted one-way classical communication capacity of interactions, and show that these quantities are additive, so that the asymptotic capacities equal the corresponding 1-shot capacities. We give general bounds on other capacities, discuss some examples, and conclude with some open questions. 相似文献
43.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
44.
Hao Wang Ying Lin Biao Chen 《Signal Processing, IEEE Transactions on》2003,51(10):2613-2623
We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms. 相似文献
45.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
46.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
47.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
48.
M. Ganschow C. Hellriegel E. Kneuper M. Wark C. Thiel G. Schulz‐Ekloff C. Bruchle D. Whrle 《Advanced functional materials》2004,14(3):269-276
Dye‐loaded AlPO4‐5 single crystals were prepared by microwave‐assisted hydrothermal synthesis from a batch, containing a mixture of three chromophores (Coumarin 40, Rhodamine BE50, and Oxazine 1) differing in their absorption range, molecular dimensions, and solubilities. Confocal fluorescence images reveal a spatial separation effect of the dye molecules, where the slimmer, more‐soluble dye molecule (Coumarin 40) is uniformly distributed in the body of the single crystal, and the bulky and/or less‐soluble ones (Rhodamine BE50, Oxazine 1) are situated in distinct domains. Visible spectra show good panchromatic absorption of visible light. Fluorescence lifetime measurements indicate the presence of an energy transfer cascade of the entirely fixed dye molecules from Coumarin 40 to Oxazine 1. The transfer mechanism is predominantly radiative. 相似文献
49.
An adaptive p-persistent MAC scheme for multimedia WLAN 总被引:1,自引:0,他引:1
Chih-Ming Yen Chung-Ju Chang Yih-Shen Chen 《Communications Letters, IEEE》2006,10(11):737-739
The letter proposes an adaptive p-persistent-based (APP) medium access control (MAC) scheme for the IEEE 802.11e distributed WLAN supporting multimedia services. The APP MAC scheme adaptively gives differentiated permission probabilities to transmission stations which are in different access category and with various waiting delay. Simulation results show that the APP MAC scheme can improve the performance of multimedia WLAN, such as small voice packet dropping probability, low delay variation, and high system throughput, compared to conventional MAC algorithms 相似文献
50.
In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts. 相似文献