20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)     

Reduction of edge reflections in the TLM model

The author points out that in the transmission-line-matrix (TLM) method, spurious reflection is encountered at the edge of the mesh. By transforming the infinite region exterior to a finite region and discretizing it by a second mesh, the magnitude of reflection is much reduced. Numerical results are presented together with an application     

FEM study of palladium and molybdenum clusters on an alumina covered field emitter

Palladium and molybdenum polycrystalline layers (clusters) have been deposited in a stainless steel UHV system onto a layer of alumina (Al₂O₃). This layer has been prepared by high temperature oxidation of an aluminium layer. The interaction of this system with nitrogen has been investigated at room temperature by an FEM technique. Under these conditions nitrogen spillover from molybdenum to palladium has been observed.     

Estimation of linear parametric models of nonGaussian discreterandom fields with application to texture synthesis

A general (possibly asymmetric noncausal and/or nonminimum phase) 2D autoregressive moving average random field model driven by an independent and identically distributed 2D nonGaussian sequence is considered. The model is restricted to be invertible, i.e., system zeros are not allowed to lie on the unit bicircle. Three performance criteria are investigated for parameter estimation of the system parameters given only the output measurements (image pixels). The proposed criteria are functions of the higher order cumulant statistics of an inverse filter output. One of these criteria is novel and the others have been considered in past only for moving average inverses and without any analysis of their consistency. In the paper strong consistency of the proposed methods under the assumption that the system order is known is proved. The convergence of the proposed parameter estimators under overparametrization is also analyzed. Experimental results involving synthesized as well as real life textures are presented to illustrate the performance of two of the considered approaches. Experimental results of synthesis of 128x128 textures visually resembling several real life textures in the Brodatz album (and other sources) are presented.     

Hydroxyl ion conduction in ytterbium-doped strontium cerate at T<580 K in H2O/air atmosphere

Open circuit voltage (OCV) measurements in H₂O/air concentration cells at T<580 K using Yb-doped SrCeO₃ electrolyte indicate that under these conditions, protons are transported through the electrolyte as -ve ions, possibly as hydroxyl (OH⁻) ions. The H⁺ ionic transport, which is generally reported, becomes the dominant mode for H₂O/air concentration cells at temperatures greater than 750 K or when H₂O/air electrodes are replaced by H₂/Ar, and the anomalous OCV sign disappears. The combination of low temperature and the presence of hydrogen and oxygen as provided by the H₂O/air system appears to be necessary for the postulated hydroxyl ion electrode reactions to take place. In addition to OCV measurements, results from impedance spectroscopy are used to provide evidence in support of the suggested hydroxyl ion mode of protonic transport under the specified conditions. These findings are directly relevant in the development of novel humidity sensors in the temperature range 450–580K and is reported in a separate paper in this conference. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

Aperture sampling requirements in planar near-field and patterncalculations

The paper covers a simple idea. If we sample an aperture, we can obtain valid patterns over a limited angular region about the normal to the aperture. The same expression can be used with near-field measurements. I reduced the expression to a nomograph. A nomograph allows one to rapidly test various choices. In the second half of the paper, I answer questions caused by the February column which discussed polarization (Milligan, IEEE Antennas. Propag. Mag., vol.38, no.1, p.56-8, 1996)     

Experimental investigation and numerical simulation of the influence of resonator-length detuning on the output power,pulse duration and spectral width of a cw mode-locked picosecond optical parametric oscillator

We report on a cw mode-locked non-critically phase matched KTP optical parametric oscillator synchronously pumped by a picosecond Ti:Sapphire laser. High average signal output power of up to 950 mW over a large tuning range has been achieved. For this OPO the influence of resonator-length detuning on the output power, pulse duration and spectral bandwidth has been investigated. The measured data are in good agreement with the results of a numerical simulation using a split-step Fourier method which considers the group-velocity mismatch, the group-velocity dispersion and the self-phase modulation. The numerical simulation also describes the measured strong pump depletion and its influence on the OPO output and efficiency.     

Three-dimensional CMOS NAND with three stacked channels

A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required 'OR' function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.<>     

1.3 μm InAsyP1-y-InPstrained-layer quantum-well laser diodes grown by metalorganic chemicalvapor deposition

The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm ² was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure