Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Testing communication and computer networks: an overview

Many activities in today's organizations are becoming ever more dependent on communications and computer networks, and network managers are faced with the enormous challenge of increasing the availability and efficiency of their infrastructures, which grow both in size and complexity. This makes it crucial to plan network operation systematically, to define and implement appropriate procedures for regular monitoring and performance assessment, and to set up proper tools for maintenance and troubleshooting purposes. Furthermore, proactive network testing must be pursued; it is vital to gather some ideas of normal network operation documented in order to have a comparison term when problems occur. The article has dealt with the measurement instruments and procedures currently adopted for network testing and advances in the field for the I&M research community.     

A case of concomitant polymorphism and spontaneous resolution: the tetragonal phase of 5‐hydroxymethyl‐7,7,N‐trimethyl‐6‐oxabicyclo[3.2.1]octane‐1‐carboxamide

The title compound, C₁₂H₂₁NO₃, crystallizes in two polymorphic forms, viz. the tetragonal form described here and the monoclinic form described previously [Foces‐Foces, López‐Rodríguez, Pérez, Martín & Pérez‐Hernández (2007). Cryst. Growth Des. 7 , 905–911]. The differences in the conformations of the hydroxymethyl and methylaminocarbonyl substituents have important consequences in the hydrogen‐bond interaction motifs and, therefore, in the packing arrangements. These forms are concomitant polymorphs with melting points differing by 3 K.     

The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation

Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Application of the wavelet transform for a channel flow in a mixed convection phenomenon

The aim of this paper is to investigate laminar-turbulent transition in a mixed convection phenomenon occurring in a horizontal rectangular duct. Indeed, laminar-turbulent transition is well known in the case of forced convection but the presence of secondary flow induced by natural convection on this transition is not well highlighted. In this study, we will not be concerned by determining a critical threshold value of a Reynolds number of transition but only to estimate the degree of turbulence in the transition regime, i.e. weak turbulence in the case of a mixed convection phenomenon. This is possible thanks to the application of the wavelet transform. The calculation of the Hölder exponent, associated with the maximum value of the singularity spectrum for various experimental conditions allows the degree of turbulence to be measured. The variation of the Hölder exponent versus heat flux and Reynolds number enables us to show that there are two ways to go towards turbulence: thermal by increasing heat flux and hydrodynamic by increasing fluid velocity.     

An efficient nonlinear circuit simulation technique

This paper proposes a novel method for the analysis and simulation of integrated circuits (ICs) with the potential to greatly shorten the IC design cycle. The circuits are assumed to be subjected to input signals that have widely separated rates of variation, e.g., in communication systems, an RF carrier modulated by a low-frequency information signal. The proposed technique involves two stages. Initially, a particular order result for the circuit response is obtained using a multiresolution collocation scheme involving cubic spline wavelet decomposition. A more accurate solution is then obtained by adding another layer to the wavelet series approximation. However, the novel technique presented here enables the reuse of results acquired in the first stage to obtain the second-stage result. Therefore, vast gains in efficiency are obtained. Furthermore, a nonlinear model-order reduction technique can readily be used in both stages making the calculations even more efficient. Results will highlight the efficacy of the proposed approach     

Social utility Functions-part II: applications

Social utilities account for agent preferences and, thus, can characterize complex interrelationships, such as cooperation, compromise, negotiation, and altruism, that can exist between agents. Satisficing game theory, which is based on social utilities, offers a framework within which to design sophisticated multiagent systems. Key features of this approach are: a) an N-agent system may be represented by a 2N-dimensional Bayesian network, called a praxeic network; b) the theory accommodates a notion of situational altruism (a willingness to defer to others in a controlled way if so doing would actually benefit others under the condition that others wish to take advantage of such largesse); and c) satisficing games admits a protocol for effective negotiation between agents who, though interested in their own welfare, are also willing to give some deference to others. Three applications are presented. The first two involve well-known two-person games: the Prisoner's Dilemma and the Battle of the Sexes, and the third is a simulated uninhabited aerial vehicle scenario.     

A stochastically optimized adaptive procedure for the location of MAS auxiliary monopoles: the case of electromagnetic scattering by dielectric cylinders

A genetically optimized technique that fully automates the potentially laborious allocation of the auxiliary monopoles for the method of auxiliary sources (MAS) is presented for the problem of electromagnetic (EM) scattering by isotropic dielectric cylinders with various cross sections. The proposed technique uses as input information not only the geometry of the scatterer but also the exciting field and the material properties of the cylinders are implicitly taking part in the optimization procedure. The resulting auxiliary surfaces, where the simulating monopoles are situated, are appropriately adapted to the original boundary surface and the MAS modeling is greatly facilitated. In addition, certain considerations are taken into account in order to avoid undesirable numerical dependencies between the fictitious monopoles. Finally, the accuracy of the numerical method combined with overdetermined systems of equations is examined for isotropic cylinders of various geometries and dielectric characteristics.     

High-performance single-mode VCSELs in the 1310-nm waveband

High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20/spl deg/C-80/spl deg/C. Modulation capability at 3.2 Gb/s is demonstrated up to 70/spl deg/C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.