50 years of the IEEE Microwave Theory and Techniques Society

The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described     

General properties of antennas

In antenna design there are some fundamental relationships based on reciprocity. The equivalence of antenna pattern in transmission and reception is well known. Less well known is the time-derivative relationship going from reception to transmission. These relationships are derived here and expressed in various useful forms. Electric and magnetic dipoles are given special consideration, and the combined form constructed as a terminated TEM transmission line (the BTW antenna) is discussed for its transmission and reception properties     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

Electromigration-induced damage in bamboo Al interconnects

Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void and the hillock reached the critical length for electromigration at the given current density. A modified equation for the drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform depletion are more reliable than those with uniform depletion.     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Application of neural networks and machine learning in networkdesign

Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies     

Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors

We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.     

Color image retrieval based on hidden Markov models

In this correspondence, a new approach to retrieving images from a color image database is proposed. Each image in the database is represented by a two-dimensional pseudo-hidden Markov model (2-D PHMM), which characterizes the chromatic and spatial information about the image. In addition, a flexible pictorial querying method is used, by which users can paint the rough content of the desired images in a query picture. Image matching is achieved by comparing the query picture with each 2-D PHMM in the database. Experimental results show that the proposed approach is indeed effective.     

Effect of iodine sorption on the free volume of polycarbonate

 The effect of iodine sorption on the free volume of polycarbonate is investigated by Positron Annihilation Lifetime method. The observed results are interpreted in terms of the Charge Transfer Complex formation and precipitation of iodine at the initial and final stages of sorption, respectively. At higher levels of sorption, changes in the second lifetime and its intensity seem to suggest a conformational transformation, probably due to the net change in the amorphous-crystalline boundary regions of the polymer matrix. The free volume cavities have been predominantly occupied by I^- ₃ species and the diffusion process obeys Fick’s law. An exponential type correlation has been observed between fractional free volume and the diffusion coefficient. Received: 13 June 1996/Accepted: 20 September 1996     

A biased percolation model for the analysis of electronic-device degradation

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments.