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141.
A Low-Power CMOS Linear-in-Decibel Variable Gain Amplifier With Programmable Bandwidth and Stable Group Delay 总被引:1,自引:0,他引:1
Tsou S.-C. Li C.-F. Huang P.-C. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(12):1436-1440
This brief presents a new circuit architecture for linear-in-decibel, constant-bandwidth variable gain amplifier (VGA). To obtain high linearity under low-voltage operation, this VGA is a closed-loop structure. In loop amplifier design, two techniques are applied: first, the loop amplifier is given finite input impedance. This arrangement keeps the VGA bandwidth constant under different gain setting. Second, a current-buffered compensation is applied for loop stability. Compared to the Miller compensation, this method achieves wider bandwidth. The prototype chip using 0.18-mum CMOS technology demonstrates that -10- to 20-dB gain and 0.5- to 30-MHz bandwidth can be programmed independently. The group delay difference within 30-dB gain control range is smaller than 1%. The total circuit dissipates 1.35 mA from a 1.8-V supply 相似文献
142.
Charalambous C.D. Bultitude R.J.C. Li X. Zhan J. 《Wireless Communications, IEEE Transactions on》2008,7(2):434-439
This paper is concerned with modeling and identification of wireless channels using noisy measurements. The models employed are governed by stochastic differential equations (SDEs) in state space form, while the identification method is based on the expectation-maximization (EM) algorithm and Kalman filtering. The algorithm is tested against real channel measurements. The results presented include state space models for the channels, estimates of inphase and quadrature components, and estimates of the corresponding Doppler power spectral densities (DPSDs), from sample noisy measurements. Based on the available measurements, it is concluded that state space models of order two are sufficient for wireless flat fading channel characterization. 相似文献
143.
Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector. 相似文献
144.
We have simultaneously used adsorption isotherm volumetry and Fourier transform infrared spectroscopy in order to take the investigations on amorphous ice structure a step further, especially concerning porosity and annealing-induced modifications. We have studied surface reorganization during annealing and found that the number of surface sites decreases before crystallization, their relative ratios being different for amorphous and crystalline ice. We also present results confirming that ice can have a large specific surface area and nevertheless be non-microporous. 相似文献
145.
Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs 总被引:1,自引:0,他引:1
Chung-Hsun Jang Sheu J.K. Tsai C.M. Shei S.C. Lai W.C. Chang S.J. 《Photonics Technology Letters, IEEE》2008,20(13):1142-1144
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献
146.
Many activities in today's organizations are becoming ever more dependent on communications and computer networks, and network managers are faced with the enormous challenge of increasing the availability and efficiency of their infrastructures, which grow both in size and complexity. This makes it crucial to plan network operation systematically, to define and implement appropriate procedures for regular monitoring and performance assessment, and to set up proper tools for maintenance and troubleshooting purposes. Furthermore, proactive network testing must be pursued; it is vital to gather some ideas of normal network operation documented in order to have a comparison term when problems occur. The article has dealt with the measurement instruments and procedures currently adopted for network testing and advances in the field for the I&M research community. 相似文献
147.
C. Foces‐Foces M. Lpez‐Rodríguez C. Prez 《Acta Crystallographica. Section C, Structural Chemistry》2008,64(2):o95-o97
The title compound, C12H21NO3, crystallizes in two polymorphic forms, viz. the tetragonal form described here and the monoclinic form described previously [Foces‐Foces, López‐Rodríguez, Pérez, Martín & Pérez‐Hernández (2007). Cryst. Growth Des. 7 , 905–911]. The differences in the conformations of the hydroxymethyl and methylaminocarbonyl substituents have important consequences in the hydrogen‐bond interaction motifs and, therefore, in the packing arrangements. These forms are concomitant polymorphs with melting points differing by 3 K. 相似文献
148.
K. Morigaki K. Takeda H. Hikita C. Ogihara P. Roca i Cabarrocas 《Journal of Non》2008,354(19-25):2131-2134
Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed. 相似文献
149.
J. Song H. Jiang Z.J. Liu D.Y. Khang Y. Huang J.A. Rogers C. Lu C.G. Koh 《International Journal of Solids and Structures》2008,45(10):3107-3121
A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically. 相似文献
150.
The aim of this paper is to investigate laminar-turbulent transition in a mixed convection phenomenon occurring in a horizontal rectangular duct. Indeed, laminar-turbulent transition is well known in the case of forced convection but the presence of secondary flow induced by natural convection on this transition is not well highlighted. In this study, we will not be concerned by determining a critical threshold value of a Reynolds number of transition but only to estimate the degree of turbulence in the transition regime, i.e. weak turbulence in the case of a mixed convection phenomenon. This is possible thanks to the application of the wavelet transform. The calculation of the Hölder exponent, associated with the maximum value of the singularity spectrum for various experimental conditions allows the degree of turbulence to be measured. The variation of the Hölder exponent versus heat flux and Reynolds number enables us to show that there are two ways to go towards turbulence: thermal by increasing heat flux and hydrodynamic by increasing fluid velocity. 相似文献