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61.
Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo
Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom
Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void
and the hillock reached the critical length for electromigration at the given current density. A modified equation for the
drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform
depletion are more reliable than those with uniform depletion. 相似文献
62.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献
63.
Fahmy H.I. Develekos G. Douligeris C. 《Selected Areas in Communications, IEEE Journal on》1997,15(2):226-237
Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies 相似文献
64.
C.H. Chu C.I. Hung Y.H. Wang M.P. Houng 《Photonics Technology Letters, IEEE》1997,9(9):1262-1264
We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques. 相似文献
65.
Color image retrieval based on hidden Markov models 总被引:1,自引:0,他引:1
In this correspondence, a new approach to retrieving images from a color image database is proposed. Each image in the database is represented by a two-dimensional pseudo-hidden Markov model (2-D PHMM), which characterizes the chromatic and spatial information about the image. In addition, a flexible pictorial querying method is used, by which users can paint the rough content of the desired images in a query picture. Image matching is achieved by comparing the query picture with each 2-D PHMM in the database. Experimental results show that the proposed approach is indeed effective. 相似文献
66.
玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光 总被引:4,自引:0,他引:4
系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系. 相似文献
67.
非线性光纤方向耦合器孤子动力特性分析 总被引:2,自引:0,他引:2
利用变分方法,导出了双曲正割型光孤子在非线性光纤耦合器中传输时满足的动力学方程组,分析了该方程组的平衡点性态,讨论了光孤子的开关特性.指出参数|β|<2π.是能实现完全的开关操作的必要条件. 相似文献
68.
The effect of iodine sorption on the free volume of polycarbonate is investigated by Positron Annihilation Lifetime method.
The observed results are interpreted in terms of the Charge Transfer Complex formation and precipitation of iodine at the
initial and final stages of sorption, respectively. At higher levels of sorption, changes in the second lifetime and its intensity
seem to suggest a conformational transformation, probably due to the net change in the amorphous-crystalline boundary regions
of the polymer matrix. The free volume cavities have been predominantly occupied by I-
3 species and the diffusion process obeys Fick’s law. An exponential type correlation has been observed between fractional
free volume and the diffusion coefficient.
Received: 13 June 1996/Accepted: 20 September 1996 相似文献
69.
The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments. 相似文献
70.
Control of peak sidelobe level in adaptive arrays 总被引:1,自引:0,他引:1
Renbiao Wu Zheng Bao Yuanliang Ma 《Antennas and Propagation, IEEE Transactions on》1996,44(10):1341-1347
Adaptive beamforming techniques are now widely used to reject interference (jammer/clutter) signals in radar, communication, and sonar applications. In adaptive arrays using the sample matrix inversion (SMI) algorithm, inadequate estimation of the covariance matrix results in adaptive antenna patterns with high sidelobes and distorted mainbeams. In this paper, a method is proposed to precisely control the peak (rather than average) sidelobe level of adaptive array patterns. The proposed method is also generalized to adaptive array antennas with moderate bandwidth and large random amplitude and phase errors. Theoretical analysis and simulation results are provided to illustrate the performance of the method proposed 相似文献