89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Isosteres of peptides: boron analogs as dipolar forms of α‐amino acids – a theoretical study

Modification of peptides to produce peptidomimetics is of great interest, with the aim of designing potent, selective, and metabolically stable analogs having certain conformational properties. Organoboranes have been reported in the literature with a wide range of therapeutic applications. One of the therapeutically important class of molecules is amine‐carboxyboranes derived from amino acids by replacement of the Cα atom of an amino acid/peptide by boron. The conformational preferences of these peptides, with respect to backbone ω, ?, and ψ torsion angles, have been investigated by theoretical calculations. The amide bond in these molecules has the same geometry in the ground and transition states as the natural peptides. However, the boron isosteres of glycine and alanine peptides are less structured than their natural derivatives, but are distinguished by structures with a positive value for the ? angle, which is normally disfavored for natural peptides. This property could be used to build peptides with a geometry not usually seen in natural peptides. Copyright © 2007 John Wiley & Sons, Ltd.     

Transient response of a microstrip line circuit excited by anexternal electromagnetic source

The transient voltages and currents induced by an external electromagnetic field along a microstrip line interconnecting active and/or passive components are studied by using a distributed-source transmission-line model. The influence of the angle of incidence as well as that of the microstrip geometrical and electrical parameters on the line response is analyzed. The instantaneous voltage and power induced on the loads by various types of pulse excitations are computed. Numerical results are obtained both for dispersive and nondispersive lines. A line feeding a transistor microwave amplifier is also considered. The results show the effects of the multiple reflections of the field inside the dielectric substrate and of the signal at the ends of the line. Indications of how to reduce the coupling between the external field and the considered structure are given     

Studies on Rare-Earth/Iron and Actinide/Iron Multilayers

Hyperfine Interactions - Multilayers of Ce/Fe and U/Fe were fabricated by sputtering and studied by X-ray diffraction and reflectivity, Mössbauer spectroscopy and polarised neutron...     

Quantum information processing in optical images

Optical images can be used to transport, store and process information in a parallel way. We discuss different results obtained in the domain of ‘quantum imaging’, aiming at exploiting at the same time the quantum properties of optical images and their intrinsic parallelism. We define the notion of standard quantum limit (SQL) in optical resolution, set by the quantum noise of usual coherent light, and show that it can be much lower than the diffraction limit. We also prove that this limit can be circumvented by especially designed nonclassical and multimode light. We present an experiment showing that OPOs oscillating inside an exactly confocal cavity actually produce such transverse multimode nonclassical light. We finally describe another experiment which has surpassed the SQL in the case of beam positioning, both in the 1D and 2D cases.     

Molecular flow and wall collision age distributions

The use of storage cells has become a standard technique for internal gas targets in conjunction with high energy storage rings. In case of spin-polarized hydrogen and deuterium gas targets the interaction of the injected atoms with the walls of the storage cell can lead to depolarization and recombination. Thus the number of wall collisions of the atoms in the target gas is important for modeling the processes of spin relaxation and recombination. It is shown in this article that the diffusion process of rarefied gases in long tubes or storage cells can be described with the help of the one-dimensional diffusion equation. Mathematical methods are presented that allow one to calculate collision age distributions (CAD) and their moments analytically. These methods provide a better understanding of the different aspects of diffusion than Monte Carlo calculations. Additionally it is shown that measurements of the atomic density or polarization of a gas sample taken from the center of the tube allow one to determine the possible range of the corresponding density weighted average values along the tube. The calculations are applied to the storage cell geometry of the HERMES internal polarized hydrogen and deuterium gas target. Received 9 July 2001 and Received in final form 18 September 2001     

Electronic and geometric properties of alkali-C60 molecules

First-principle electronic structure calculations are carried out for M_xC ₆₀ ^q , where M = Li, Na, K and ( x , q ) = (1, 0),(1,±1),(2, 0),(3, - 1),(6, 0),(6, - 1),(12, 0) using the local density functional. The electric dipole moment for MC₆₀ agrees with the experimental results. The calculated Mulliken charge indicates that the bonding of the alkali atom with C₆₀ is mostly ionic except for lithium. The alkali atom prefers to make many bonds with the carbon atoms rather than a single bond with the neighbor carbon atom. The calculated adsorption energy suggest that the metal-metal bonding of sodiums and potassiums on C₆₀ arises for more than the six valence electrons in the alkali atoms. The lithium-lithium bond is, on the other hand, not appeared for x ? 12. The difference in the most stable geometry between lithiums and the other alkali atoms on C₆₀ comes from the covalent character of the lithium-carbon bond.     

Characterization of charge trapping in submicrometer NMOSFET's bygate capacitance measurements

Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence     

13C and 1H NMR analysis of the nitration products of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline and 2-amino-4-oxo-(3H)-5-fluoroquinazoline

Nitration of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline is shown to occur exclusively at C⁶ as determined from an analysis of long range ¹H and ¹⁹F scalar couplings to ring carbons. Nitration of 2-amino-4-oxo-(3H)-5-fluoroquinazoline is found to occur both at C⁶ and C⁸ as evident from an analysis of the ¹⁹F and ¹H couplings of the ring protons.