RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

LiNbO3 optical waveguides formed in a new proton source

Proton-exchanged planar waveguides have been fabricated on Z-cut and X-cut lithium niobate crystals by using a new proton source formed by a mixture of benzoic and adipic acids. Waveguide index profiles and optical characteristics have been obtained at different values of the adipic-benzoic acid concentration ratio. The samples have been structurally characterized by Raman and infrared (IR) absorption spectroscopy and double-crystal X-ray diffraction. Good quality samples have been fabricated by using 30 mol% ratio dilution, showing very low scattering levels (<0.1 dB/cm), relatively high electrooptic coefficient (r₃₃=0.88 pm/V), and low relative percentage of interstitial protons (26%). The main factor limiting the waveguide optical properties is the substitutional-interstitial proton ratio, which can be easily controlled to produce good quality waveguides. A demonstration of the repeatability of the exchange process in the acid mixture is also provided     

Scattering from and penetration into a dielectric-filled conductingcylinder with multiple apertures

The theory of characteristic modes for aperture problems is used in this paper to solve the equivalent magnetic current and aperture fields due to a conducting cylinder with multiple slots. It is assumed that these slots are illuminated by either a transverse electric (TE) or a transverse magnetic (TM) plane wave and the media inside and outside the cylinder exhibit different electromagnetic properties. The formulation is given for the general case and numerical results for a limited number of slots are presented     

Crosstalk between microstrip transmission lines

Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk     

FORECASTING MINERAL SUPPLY FROM MINERAL RENT DATA

An optimal control model of exhaustible resources is used to clarify the long run relationship between mineral rent and depletion cost at the industry level. A standard first order condition of the time rate of change of rents is reformulated to reveal that rent data may be used to help forecast the rise in extraction costs resulting from resource depletion. This application of the theory of exhaustible resources is illustrated using historical mineral industry rent and extraction cost data. A forecast of U.S. coal extraction costs, following the method proposed in this paper, suggests that future rates of extraction cost increases will be similar to rates experienced in the past.     

The correlation of texture and magnetic properties in Co-Cr films

This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and the magnetostriction on the orientation of the magnetization cannot be neglected. On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China.     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Series equivalence/operation of current-controlled boost-typesingle-phase voltage source converters for bidirectional power flow

Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

A unified diode model for circuit simulation

A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation and is of particular interest in power applications