GaInP/GaAs HBTs for high-speed integrated circuit applications

The use of GaInP/GaAs heterojunction bipolar transistors (HBTs) for integrated circuit applications is demonstrated. The discrete devices fabricated showed excellent DC characteristics with low V_ce offset voltage and very low temperature sensitivity of the current gain. For a non-self-aligned device with a 3-μm×1.4-μm emitter area, f_T was extrapolated to 45 GHz and f_max was extrapolated to 70 GHz. The measured 1/f noise level was 20 dB better than that of AlGaAs HBTs and comparable to that of low-noise silicon bipolar junction transistors, and the noise bump (Lorentzian component) was not observed. The fabricated gain block circuits showed 8.5 dB gain with a 3-dB bandwidth of 12 GHz, and static frequency dividers (divide by 4) were operable up to 8 GHz     

Simple systolic arrays for discrete cosine transform

in this paper, simple 1-D and 2-D systolic array for realizing the discrete cosine transform (DCT) based on the discrete Fourier transform (DFT) fo an input sequence are presented. The proposed arrays are obtained by a simple modified DFT (MDFT) and an inverse DFT (IDFT) version of the Goertzel algorithm combined with Kung's approach. The 1-D array requiresN cells, one multiplier and takesN clock cycles to produce a completeN-point DCT. The 2-D array takes N clock cycles, faster than the 1-D array, but the area complexity is larger. A continuous flow of input data is allowed and no idle time is required between the input sequences.