Optically preamplified receiver performance due to VSB filtering for 40-Gb/s optical signals modulated with various formats

Optically preamplified receiver performance according to the vestigial sideband (VSB) filtering has been numerically investigated for 40-Gb/s optical signals modulated with nonreturn-to-zero, duobinary nonreturn-to-zero (NRZ), return-to-zero (RZ), carrier-suppressed RZ, and duobinary carrier-suppressed RZ formats. The VSB filtering enables the spectral widths of NRZ, duobinary NRZ, and RZ signals to be reduced without severe power penalties at the receiver. On the other hand, carrier-suppressed RZ and duobinary carrier-suppressed RZ signals have no large advantages over VSB filtering because of the characteristics of their signals. Our results suggest that RZ signals are the most suitable modulation format for VSB filtering, without considering the filter loss, because of the tolerance of the intersymbol interference and a large spectral width. However, duobinary NRZ signals are the most suitable modulation format for VSB filtering, considering the filter loss, because of their narrow spectral width.     

Spectral shape tunable band-rejection filter using a long-period fiber grating with divided coil heaters

We have developed a new type of tunable band rejection filter, which provides high spectral-shaping flexibility in a wide tuning range. The filter consists of a long-period fiber grating (LPFG) with divided coil heaters. Each of the divided coil heaters is controlled individually to adjust a temperature distribution along the LPFG and to modify the spectral shape of the LPFG filter. The tunable band rejection filter is demonstrated to function properly when applied as an erbium-doped fiber amplifier gain-flattening filter.     

Intelligent process analytics for CRM

Many organisations use decision models in their processes such as tables or trees to provide decision support to their operational divisions. For example, in fault management, customer contact centre operators usually use a decision model in the form of prescribed interviews. Based on the answers given by customers, the operator navigates through the decision model to reach an assessment of the problem. In order to achieve customer satisfaction and operational excellence, it is very important to constantly monitor the performance of a decision model not only on an overall level, but also on the level of individual decisions. In this paper we present a configurable business process analytics tool, known as the intelligent Universal Service Management System, that constantly monitors decision data and is capable of optimising the decisions based on high-level business objectives. We explain the various features of the software and show how it can be used to optimise decision processes. We also show how we can easily provide a customised version to monitor the performance of provision processes.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

A new method to suppress harmonics using /spl lambda//4 bias line combined by defected ground structure in power amplifiers

A new /spl lambda//4 bias line combined by a dumb-bell shaped defected ground structure (DGS) is proposed to suppress harmonics in power amplifiers. The proposed DGS bias line maintains the required high impedance even after DGS is inserted, while the width and length of the /spl lambda//4 bias line are broader and shorter than those of conventional bias lines. When the DGS bias line is used in power amplifiers, the third harmonic components as well as the second harmonic are reduced, because of the increased slow-wave effect over wide harmonic band. It is shown that the reduction of the third harmonic component, the improvement of 1 dB compression point, and power added efficiency are 26.5 dB, 0.45 dB, and 9.1%, respectively.     

Transmission performance of 10-Gb/s 1550-nm transmitters using semiconductor optical amplifiers as booster amplifiers

We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/).     

Theoretical analysis of cladding-mode waveguide dispersion and its effects on the spectra of long-period fiber grating

A new method to control the free spectral range (FSR) of a long-period fiber grating (LPFG) is proposed and theoretically analyzed. As the refractive index decreases radially outward in the silica cladding by graded doping of fluorine, waveguide dispersion in the cladding modes was modified to result in the effective indexes change and subsequently the phase-matching conditions for coupling with the core mode in a LPFG. Enlargement of the FSR in a LPFG was theoretically confirmed.     

A New Approach for Built‐in Self‐Test of 4.5 to 5.5 GHz Low‐Noise Amplifiers

This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.