Asymptotic Analysis of Vertical Branch-Cut Integral of Shear Waves in a Fluid-Filled Borehole Utilizing the Steepest-Descent Method

We obtain an asymptotic solution to the vertical branch-cut integral of shear waves excited by an impulsive pressure point source in a fluid-filled borehole, by taking the effect of the infinite singularity of the Hankel functions related to shear waves in the integrand at the shear branch point into account and using the method of steepest-descent to expand the vertical branch-cut integral of shear waves. It is theoretically proven that the saddle point of the integrand is located at ks-i/z, where ks and z are the shear branch point and the offset. The continuous and smooth amplitude spectra and the resonant peaks of shear waves are numerically calculated from the asymptotic solution. These asymptotic results are generally in agreement with the numerical integral results. It is also found by the comparison and analysis of two results that the resonant factor and the effect of the normal and leaking mode poles around the shear branch point lead to the two-peak characteristics of the amplitude spectra of shear waves in the resonant peak zones from the numerical integral calculations.     

Opinion Spreading with Mobility on Scale-Free Networks

A continuum opinion dynamic model is presented based on two rules. The first one considers the mobilities of the individuals, the second one supposes that the individuals update their opinions independently. The results of the model indicate that the bounded confidence εc, separating consensus and incoherent states, of a scale-free network is much smaller than the one of a lattice. If the system can reach the consensus state, the sum of all individuals＇ opinion change Oc（t） quickly decreases in an exponential form, while if it reaches the incoherent state finally, Oc（t） decreases slowly and has the punctuated equilibrium characteristic.     

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films

Composition in amorphous Si1-xCx：H heteroepitaxial thin films on Si （100） by plasma enhanced chemical vapour deposition （PECVD） is analysed. The unknown x （0.45-3.57） and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum （RBS）, resonance-nuclear reaction analysis （R-NRA） and elastic recoil detection （ERD）, respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing （RTA） or laser spike annealing （LSA） in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

Passively Q-Switched Quasi-Continuous-Wave Diode-Pumped Intracavity Optical Parametric Oscillator at 1.57

We report on a passively Q-switched quasi-cw diode-pumped Nd:YAG including an intracavity optical parametric oscillator. The dynamics of this system is described by solving the coupled equations. The effect of the initial transmission of Cr⁴⁺:YAG saturable absorber on the signal wave operation is studied. Under optimum conditions, we achieve 2.3mJ energy at 1.57μm wavelength for 40Hz repetition rate. The peak power of the pulses amounts to 0.88MW with the pulse width of 2.6ns. When the Fresnel reflection losses of the filters are taken into account, the pulse energy would be higher than 2.3mJ. To the best of our knowledge, this is the highest pulse energy and peak power for such a type of single resonant quasi-cw diode pumped Nd:YAG/Cr⁴⁺:YAG IOPO laser.     

生长温度和结构参数对InGaAs／GaAs量子阱光学特性的影响

研究了不同生长温度下制备的In0.15Ga0.85As/GaAs应变量子阱的PL谱,结果表明,生长温度越高,In偏析和In-Ga互混越严重,同时,导致更多的In脱附,PL谱发光峰蓝移。对不同In含量的和不同InGaAs厚度的InGaAs/GaAs量子阱进行PL谱测试,分析表明In含量<0.2,生长温度低于560℃时,In含量和InGaAs层量子阱的厚度对In偏析、脱附和In-Ga互混基本没有影响。     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

MSM结构ZnO紫外探测器的制备与性质

采用射频磁控溅射在石英衬底上制备了c轴择优取向的ZnO薄膜,利用蚀刻技术制备了MSM结构的光导型紫外探测器。在3V偏压下,器件的暗电流小于250nA,光响应峰值在370nm,响应度是0.34A/W。其紫外(360nm)与可见光(420nm)的抑制比为4个数量级。器件的光响应时间上沿仅为20ns。     

平面和曲面光学零件气囊抛光材料去除的比较研究

气囊数控抛光是近年来一种新兴的先进光学制造技术,采用柔性的气囊作为抛光工具并以进动的方式进行加工。首先简要阐述了气囊抛光的抛光原理,然后针对平面和曲面光学零件,在自行研制的气囊抛光实验样机上进行了抛光实验。被抛光光学元件的材料去除是在抛光区内实现的。研究了进动角、气囊压缩量、气囊内部压力、气囊转速、抛光时间以及工件的曲率半径几种重要的工艺参数对平面工件和球面工件抛光接触区大小和形状影响情况的异同。在此基础上,总结了气囊抛光材料去除的影响规律。给出了几种重要工艺参数在平面工件和球面工件上取值范围。     

目标图像长宽比对Vander Lugt相关器特性的影响

分析了使用VLC进行光学相关识别时目标图像长宽比的变化对匹配滤波器畸变容限和输出相关峰值的影响。利用非约束纯相位匹配滤波器算法和迂回相位编码方法设计匹配滤波器,对具有确定面积和透过率而长宽比不同的矩形目标进行光学相关识别。模拟和实验结果表明：随着目标图像长宽比增加,匹配滤波器畸变容限减小,相关峰值降低。VLC更容易识别长宽比趋近1的目标图像。