T_C≥400°C高温PTC陶瓷的研制

利用国产原料，采用传统的陶瓷材料制备工艺，研制了居里温度ＴＣ≥４００°Ｃ的高温ＰＴＣ陶瓷，制成了居里温度ＴＣ＝４１２°Ｃ，电阻Ｒ≤１０３Ω，ｌｇ（Ｒｍａｘ／Ｒｍｉｎ）＝４的高性能ＰＴＣ热敏陶瓷材料     

PZT铁电薄膜的制备及电学性能研究

使用硝酸锆作锆源的溶胶－凝胶方法制备ＰＺＴ铁电薄膜。他们的电学性能被测试包括电滞回线，电流Ｉ（ｔ）特性，漏电流，矫顽场疲劳和老化。测到的ＰＺＴ薄膜剩余极化８．２μＣ／ｃｍ~２，矫顽场６８ｋＶ／ｃｍ．簿膜的寿命可超过１０~（１１）周期。     

A molecular network model to describe the nonlinear viscoelastic behavior of polymers

A transient molecular network model is built to describe the nonlinear viscoelasticity of polymers by considering the effect of entanglement loss and regeneration on the relaxation of molecular strands. It is an extension of previous network theories. The experimental data on three thermoplastic polymers (ABS, PVC and PA6) obtained under various loading conditions are used to test the model. Agreement between the theoretical and experimental curves shows that the suggested model can describe successfully the relaxation behavior of the thermoplastic polymers under different loading rates by using relatively few relaxation modes. Thus the micromechanism responsible for strain-rate dependence of relaxation process and the origin of nonlinear viscoelasticity may be disclosed. The project supported by the National Natural Science Foundation of China and Doctorial Fund     

On order-preservation and positive correlations for multidimensional diffusion processes

Summary As a continuation of the study by Herbst and Pitt (1991), this note presents two criteria. The first one is on the order-preservation for two (may be different) multidimensional diffusion processes. The second one is on the preservation of positive correlations for a diffusion process.Research supported in part by the Ying-Tung Fok Educational Foundation and the National Natural Science Foundation of China     

竞争环境下电信行业的普遍服务

以引入竞争为标志的电信领域改革以来，在竞争环境下如何实现作为原有垄断经营者政治使用命的普遍服务，成了世界各国政府，企业，学术界及国际电信机构共同关注的重大问题，我国是个发展中国家，电信的普通服务远没有完成。因此在借鉴国外经验的基础上，研究和探讨竞争环境下实现普遍服务的政策和策略具有十分现实的意义。     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS     

国外混合微电子技术的新进展

混合微电子技术，推动了整个电子工业的发展。从市场和技术两个方面评述这种发展态势，重点介绍先进混合集成技术。     

最大度为6的极大外平面图的完备色数

证明了最大度为６的极大外平面图的完备色数为７。     

高精度CCD尺寸自动检测系统的光学系统设计

介绍测量精度为±０．００３ｍｍ的ＣＣＤ尺寸检测系统的光学系统设计特点及远心物镜设计原理，并给出了测试结果。     

Transient hot-electron effect and its impact on circuit reliability

Transient hot-electron effect and its impact on circuit reliability are investigated. The rate of device decay is monitored as a function of the gate pulse transient period. Simulation results reveal that excess charges during a fast turn off time may cause an increase in the maximum substrate current. This, along with our experimental data, identifies that transient excess carrier may cause the enhancement of device degradation under certain stress conditions. The enhancement factor of the degradation is a function of the gate pulse transient time. Correlation between the analysis based upon AC/DC measurement and calculations based upon transient simulation are shown in the paper. Better agreement with experimental data is obtained by using the transient analysis and on chip test/stress structures. The correlation between AC and DC stress data is also shown based on the impact ionization model. A hot-electron design guideline is proposed based on the circuit reliability analysis. This guideline can help improve the circuit reliability without adversely effecting the circuit performance.