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181.
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183.
Several companies have made major strides in marketing cellular telephones to children within the past 12 months; more and more children are using cell phones as part of their daily routines. Some fear any disturbance to brain activity in children could lead to impaired learning ability or behavioral problems. Moreover, any lasting biochemical effects could have important consequences, especially in the young, who still have years of development ahead of them. Recently, two studies of the mental process of young users of standard 902 MHz Global System for Mobile Communication (GSM) cellular mobile telephones were published: one paper reported a slight trend toward speeding up of simple reaction time, whereas the other study did not detect any change in cognitive functions. 相似文献
184.
A graph G is N2‐locally connected if for every vertex ν in G, the edges not incident with ν but having at least one end adjacent to ν in G induce a connected graph. In 1990, Ryjá?ek conjectured that every 3‐connected N2‐locally connected claw‐free graph is Hamiltonian. This conjecture is proved in this note. © 2004 Wiley Periodicals, Inc. J Graph Theory 48: 142–146, 2005 相似文献
185.
We study the structure of invertible substitutions on three-letter alphabet. We show that there exists a finite set
of invertible substitutions such that any invertible substitution can be written as Iwσ1σ2σk, where Iw is the inner automorphism associated with w, and
for 1jk. As a consequence, M is the matrix of an invertible substitution if and only if it is a finite product of non-negative elementary matrices. 相似文献
186.
软交换技术的发展及其应用 总被引:1,自引:0,他引:1
软交换是下一代网络NGN的核心技术,本文从软交换的概念入手,介绍了软交换的基本功能及其优点.软交换的网络系统结构、软交换的对外接口等内容,并探讨了软交换技术的应用。 相似文献
187.
Sosnowchik B.D. Azevedo R.G. Cao A. Lin L. Pisano A.P. 《Advanced Packaging, IEEE Transactions on》2005,28(4):626-634
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests. 相似文献
188.
本文针对背景噪声为冲击噪声的情况,提出了一种新的近场源二维参数估计方法.本方法利用协变异(或协变异系数)构造矩阵,并通过求根的方法估计近场源的方向角和距离参数.该算法可以抑制冲击噪声对估计性能的影响,同时具有无需谱峰搜索的优点.仿真实验证明了该算法的有效性. 相似文献
189.
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall 总被引:1,自引:0,他引:1
Chia-Feng Lin Zhong-Jie Yang Jing-Hui Zheng Jing-Jie Dai 《Photonics Technology Letters, IEEE》2005,17(10):2038-2040
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications. 相似文献
190.
林春华 《信息安全与通信保密》2005,(6):124-125
内网安全的重要性网络的发展给工作带来巨大便利的同时也带来了众多安全隐患,有关网络信息安全的问题日益突出。目前绝大多数的企业、学校、政府机构把安全重点放在防范来自外部的攻击,依赖于防火墙、防病毒、入侵检测等软件。尽管在所有介绍系统安全的文献中都会提及来自于内部的安全威胁,却鲜有针对内部安全隐患的防范工具与手段。2003年美国CSI/FBI提供的《计算机犯罪与安全调查报告》显示,80%以上的信息安全事件为内部人员和内外勾结所为。尤其近几年来,随着个人技术水平的提高,IP地址非法占用和盗用、非法外联现象、计算机基本信息… 相似文献