A New Approach for Built‐in Self‐Test of 4.5 to 5.5 GHz Low‐Noise Amplifiers

This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.     

数字下变频器GC1012B原理及配置方法

数字下变频技术是软件无线电的一项核心技术,其性能的好坏直接影响数字接收机的精度。GC1012B是美国TI公司推出的新型数字下变频器。文中从GC1012B的结构特点和内部功能框图出发,分析其工作原理,并介绍GC1012B几个主要寄存器的配置方法,从而实现对频率、滤波模式、增益大小等参数的设置。最后给出了一个具体配置实例作为参考。     

30.4 nm光电成像系统分辨率的初步实验研究

本文基于微通道板MCP(Microchannel Plate)探测器件设计一套成像系统，用于对波长为30．4nm的极紫外EUV(Extreme Ultraviolet)光进行成像．结果获得了一宽度为3mm的狭缝的像，实验测得490μm的成像系统的空间分辨率，并分析了影响系统分辨率的各种因素及为提高系统分辨率所应采取的措施．     

光束发散度对紫外写入光纤光栅的影响

用傅里叶衍射光学分析了准分子激光束发散度对于光纤光栅制备的影响，发现光束发散角使光纤光栅的布拉格波长发生改变，相位版后干涉场沿光纤轴向和径向不均匀，对制备30dB高反射率光纤光栅造成困难。实验结果与理论分析基本一致，相对于理想平行光束情况，会聚光束使得光纤光栅布拉格波长出现在短波一边，发射光束使得光纤光栅布拉格波长出现在长波一边。     

Boundedness of commutators on homogeneous Herz spaces

The boundedness on homogeneous Herz spaces is established for a large class of linear commutators generated by BMO(R ⁿ ) functions and linear operators of rough kernels which include the Calderón-Zygmund operators and the Ricci-Stein oRfiUatory singular integrals with rough kernels. Project supponed in pan by the National h’atural Science Foundation of China (Grant No. 19131080) and the NEDF of China.     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

Improved Yen-Joye's authenticated multiple-key agreement protocol

An authenticated multiple-key agreement protocol is proposed. The protocol is not only secure against the unknown-key attack but also more efficient than other protocols.     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication