Rotational discontinuity in magnetohydrodynamics

Novosibirsk. Translated fromSibirskiî Matematicheskiî Zhurnal, Vol. 34, No. 3, pp. 3–18, May–June, 1993.     

Synthesis of unsaturated esters of pyridine- and quinolinedicarboxylic acids

The divinyl, diallyl, and dipropargyl esters of pyridine-2,4-, pyridine-2,6-, and quinoline-2,4-dicarboxylic acids and the divinyl and dipropargyl esters of pyridine-2,5-dicarboxylic acid have been synthesized.     

Heterylimidazoles IV. Homolytic dissociation of hexaaryldimidazolyls and their heterocyclic analogs

The rate constants and activation energies for homolytic dissociation of 2,2-di[ ()-naphthyl]-, 2,2-diquinolinyl-, and 2,2-di(9-acridinyl)-4,4,5,5-tetraphenyldiimidazolyls in toluene in the presence of,-diphenyl--picrylhydrazine were determined. The degrees of dissociation of the diimidazolyls were found. The effect of substituents on the stability of imidazolyl radicals is discussed.See [1] for communication III.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 11, pp. 1536–1539, November, 1974.     

Effect on optical anisotropy of intramolecular lability in various molecular rotational configurations

It is shown that the effect of intramolecular lability in complex molecules on the degree of fluorescence polarization of rarified vapors is mainly mediated through perturbations of rotational motion in the region of separatrixes of A- and C-forms of rotation stereo dynamics. It is most pronounced for the orientation of optical transition dipole moment components along the axis of the molecule average moment of inertia (B) and manifests itself in all types of molecular tops. Such lability for dipole orientations along the A and C axes usually causes the degree of anisotropy to decrease by an order of magnitude and more. So it is advisable to use optical transitions with dipole moments oriented along the A or C axes for optical polarization analysis of molecules in the gaseous state, for example in analytical high-temperature polarized fluorescence.     

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

It has been shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers make it possible to attain resonant frequencies as high as 17 GHz. In this case, single-mode devices with a smaller diameter of the current aperture make it possible to attain higher frequencies at lower current densities than those of multimode devices with a larger aperture diameter. The maximum error-free data transmission rate in the direct modulation mode in NRZ format is 20 Gb/s and is limited by the parasitic cutoff frequency. The high resonant frequency suggests that further optimization of the device design, directed to decreasing the electrical capacitance and resistances, the data transmission rate in lasers based on submonolayer insertions can be increased to 40 Gb/s.     

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electroreflectance. The experimental data obtained are approximated using the suggested equivalent electrical circuit, which accounts for the formation of a nonequilibrium space charge in the carrier-depletion region of the modulator. The bandwidth of the high-frequency electrical-signal transfer to the electro-optical region, determined for the suggested equivalent electrical circuit of the modulator, is shown to be 3GHz.     

Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections with a data transmission rate of 25 Gbit/s per channel, are fabricated and studied. Lasers with a selectively oxidized current aperture 6 μm in diameter demonstrate multimode lasing with a quantum efficiency of 35–45% and a threshold current of 0.5–0.7 mA in the temperature range 20–85°C. According to the results of small-signal frequency analysis, the maximum modulation frequency of the lasers exceeds 17 GHz, with the rate of its increase with current exceeding 9 GHz/mA^1/2, which provides VCSEL operation at a rate of 25 Gbit/s in the entire working temperature range. Endurance tests for 3000 h did not reveal any sudden degradation of the lasers. The optical power at working point and the threshold current changed relative to that at the beginning of the tests by no more than 5 and 10%, respectively.     

Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.     

Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the spectral region of 850 nm is studied. It is shown that an increase in optical losses leads to a decrease in the speed of laser response and to the predominance of thermal effects, while a decrease in losses for the output of radiation brings about an increase in the response speed of the laser and the dominance of damping of the effective modulation frequency. Linear matrix emitters with the 1 × 4 format based on fast-response VCSEL with individual element addressing are produced and studied. Individual laser emitters with a current-aperture diameter of 5–7 μm provide lasing in the continuous-wave mode at room temperature in the region of 850 nm with threshold currents no higher than 0.5 mA, a differential efficiency no lower than 0.6 W/A, a modulation frequency as high as 20 GHz, and a MCEF factor of ～10 GHz/mA^1/2.