金属β-二酮化合物用于MOCVD法生长铁电氧化物薄膜

对用于MOCVD法生长铁电氧化物薄膜的金属β－二酮化合物的制备、结构及性质进行了评述，对它们在生长铁电薄膜中的应用现状进行了介绍，并对它们的应用前景作了展望。     

PVK∶DBVP掺杂体系的能量转移及发光性质的研究

研究了不同比例的PVK与齐聚PPV衍生物DBVP掺杂体系的能量转移和发光特性.通过对PVK,DBVP及PVK:DBVP掺杂体系的UV-vis,PL和PLE光谱的研究,分析了PVK与DBVP之间的能量转移过程.利用PVK在体系中类似于溶剂的分散作用,制备了结构为ITO/PEDOT/PVK:DBVP/LiF/Al的电致发光器件,研究了掺杂体系的电致发光性能.结果表明,在掺杂体系的光致发光和电致发光中,PVK的发射被有效地抑制,PVK与DBVP之间发生了非常有效的能量转移,通过调节PVK与DBVP的比例,可以获得蓝色和绿色发光,同时可以改善器件的发光性能,当PVK与DBVP的重量比为1∶2时,器件的绿色发光效率达到1·06cd/A,此时发光亮度为52cd/m2.     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

AAS测定纸巾中的铅和镉

本文采用原子吸收光谱法测定纸巾中铅、镉的含量。结果表明，不同纸巾中的污染元素铅、镉的含量不同。同时还对一种纸巾的铅、镉元素进行了回收实验，回收率在92％-104％之间。     

Impact of nonlinear phase noise on direct-detection DQPSK WDM systems

The performance degradation of differential quadrature phase-shift keying (DQPSK) wavelength-division-multiplexed (WDM) systems due to self-phase modulation (SPM)- and cross-phase modulation (XPM)-induced nonlinear phase noise is evaluated in this letter. The XPM-induced nonlinear phase noise is approximated as Gaussian distribution and summed together with the SPM-induced nonlinear phase noise. We demonstrate that 10-Gb/s systems, whose walkoff length is larger than 40-Gb/s systems', are more sensitive to XPM-induced nonlinear phase noise than 40-Gb/s systems. Furthermore, DQPSK WDM systems show lower tolerance to both SPM- and XPM-induced nonlinear phase noise than differential phase-shift keying WDM systems.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

A study on charge reduction in HfO/sub 2/ gate stacks

Charge in metal-organic chemical vapor deposition-grown HfO/sub 2/ gate stacks has been systematically studied using nMOS capacitors. It is found that, for these films, the charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO/sub 2//interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 10/sup 12/ cm/sup -2/. A forming gas anneal (FGA) reduces both interface charge greatly. The FGA can also significantly reduce the hysteresis and interface state density. The effects of post deposition anneal at various temperatures and under various ambients have also been studied. It is found that a high-temperature dilute oxidizing ambient anneal followed by an FGA reduces the charge at both interfaces.     

A boosted voltage generator for low-voltage DRAMs

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

将科技与产业联姻的物理学家路易·奈尔

文章简要地叙述了法国著名物理学家路易·奈尔的成长历程与生平业绩，其中包括他在磁学领域的诸多重大贡献、成功地创立和领导了一个富有成就的科学研究团体以及他堪称为一位出色的科技开发企业家的风范.