Cascade Rearrangement of 5-Cyclopentylidenecyclooctanones

Acid-catalyzed rearrangement of 5-cyclopentylidenecyclooctanone derivatives 9a-c was examined to obtain polyspiropolyquinanes 11a-c, considered to have a unique helical structure, through cascade rearrangement pathways consisting of continuous transannular cyclization followed by successive 1,2-alkyl shifts. The substrates were prepared easily by use of the Wittig or McMurry reaction. Reaction of the 5-cyclopentylidenecyclooctanone (9a) with acid gave the expected dispirotriquinane ketone 11a in high yield. The precise mechanism was elucidated by a deuterium-labeling experiment. In the case of the ketone 9b, having another spiroannulated cyclopentane ring attached on 9a, the trispirotetraquiane 11b was not obtained but the bis-propellane-type tetrahydrofuran 25 was produced exclusively. The 5-(5'-cyclopentylidenecyclooctylidene)cyclooctanone (9c) afforded the polycyclic compounds 27-31, depending on the acid used, instead of the desired tetraspiropentaquinane 11c. The structures of the products were determined by NMR spectral data including 2D (13)C INADEQUATE spectra and X-ray crystallographic analyses. The unexpected rearrangement pathways are also discussed.     

A characterization ofL n (q) by the normalizers' orders of their sylow subgroups

LetG be a finite group. If for every primer, whereR ₁ Syl _r G andR ₂ Syl _r (L _n (q)), thenG L _n (q).     

Euler operator and homogeneous hida distributions

Let (S)⊄L ²(S′(∔),μ)⊄(S)^* be the Gel'fand triple over the white noise space (S′(∔),μ). Let (e _n ,n>-0) be the ONB ofL ²(∔) consisting of the eigenfunctions of the s.a. operator . In this paper the Euler operator Δ _E is defined as the sum , where ∂ _i stands for the differential operatorD _{e i}. It is shown that Δ _E is the infinitesimal generator of the semigroup (T _t ), where (T _t ϕ)(x)=ϕ(e ^t x) for ϕ∈(S). Similarly to the finite dimensional case, the λ-order homogeneous test functionals are characterized by the Euler equation: Δ _Eϕ =λ_ϕ. Via this characterization the λ-order homogeneous Hida distributions are defined and their properties are worked out. Supported by the National Natural Science Foundation of China.     

雪崩光电探测器的击穿效应模型分析

基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250～320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50～140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。     

基于BAS-BP-Bagging模型的光纤陀螺温度补偿

为提高光纤陀螺的输出精度,以天牛须搜索算法(BAS)优化后的BP神经网络模型为基学习器,采用Bagging并行集成学习算法建立了BAS-BP-Bagging温度补偿模型,并对某型号光纤陀螺进行了温度补偿实验。实验结果表明,在-40～+60℃温度变化环境下,该方法补偿后的光纤陀螺温度漂移相较于补偿前减小了近80%,相较于多项式补偿算法减小了55%,相较于BP神经网络补偿算法减小了30%左右。同时该模型在对新鲜样本的补偿过程中表现出了较为优越的泛化性能。     

基于自校准技术的半球谐振陀螺正交误差的辨识补偿

在静电刚度校正技术的基础上,结合自校准算法,该文提出了一种实时辨识补偿正交误差的理论模型,并在两件套平面电极的半球谐振陀螺上进行了理论仿真和实验验证。结果表明,该方法不仅适用于半球谐振陀螺的力平衡和全角两种工作模式,还适用于虚拟进动的情况。此外,该文提出的补偿方法不会影响正交环路的控制精度,且对陀螺检测和驱动电路的增益和相位误差不敏感。     

基于无人机的空地信道特性测量系统

随着各种飞行器和通信一体化的发展,对空地信道特性的研究变得愈发重要且迫切。针对空地通信场景,本文研制了一套由无人机发射单元和地面接收单元组成的无人机空地信道测量系统。该系统选取具有平坦功率谱特性和大动态范围的ZC序列作为测量序列,利用硬件实现实时提取信道冲激响应(Channel Impulse Response, CIR),并通过采样偏差恢复、系统响应校正等方式,提高信道测量系统的准确性。实测验证结果表明,本文研制的信道测量系统与信道模拟器模拟结果和射线跟踪(Ray Tracing, RT)仿真结果基本一致。最后,开展了校园场景空地实测活动,分析了该场景路径损耗(Path Loss, PL)、莱斯K因子、均方根时延扩展(Root Mean Square-Delay Spread, RMS-DS)等信道特性。     

Floating Catalyst Chemical Vapor Deposition Patterning Nitrogen-Doped Single-Walled Carbon Nanotubes for Shape Tailorable and Flexible Micro-Supercapacitors

Micro-supercapacitors (MSCs) as high-power density energy storage units are designed to meet the booming development of flexible electronics, requiring simple and fast fabrication technology. Herein, a fast and direct solvent-free patterning method is reported to fabricate shape-tailorable and flexible MSCs by floating catalyst chemical vapor deposition (FCCVD). The nitrogen-doped single-walled carbon nanotubes (N-SWCNTs) are directly deposited on a patterned filter by FCCVD with designable patterns and facilely dry-transferred on versatile substrates. The obtained MSCs deliver an excellent areal capacitance of 3.6 mF cm⁻² and volumetric capacitance of 98.6 F cm⁻³ at a scan rate of 5 mV s⁻¹ along with excellent long-term cycle stability over 125 000 circles. Furthermore, the MSCs show good performance uniformity, which can be readily integrated via connection in parallel or series to deliver a stable high voltage (4 V with five serially connected devices) and large capacitance (5.1 mF with five parallel devices) at a scan rate of 100 mV s⁻¹, enabling powering the light emitting displays. Therefore, this method blazes the trail of directly preparing flexible, shape-customizable, and high-performance MSCs.     

Surface Growth of Boron Nitride Nanotubes through Boron Source Design

Boron nitride nanotubes (BNNTs) are promising materials due to their unique physical and chemical properties. Fabrication technologies based on gas-phase reactions reduce the control and collection efficiency of BNNTs due to reactant and product dispersion within the reaction vessel. A surface growth method that allows for controllable growth of BNNTs in certain regions using a preburied boron source is introduced. This work leverages the high solubility of boron in metals to create a boronized layer on the surface which serves as the boron source to confine the growth of BNNTs. Dense and uniform BNNTs are obtained after loading catalysts onto the boronized substrate and annealing under ammonia. Confirmatory experiments demonstrate that the boride layer provides boron for BNNTs growth. Furthermore, the patterned growth of BNNTs is realized by patterning the boronizing region, demonstrating the controllability of this method. In addition, the Ni substrate with BNNTs growth exhibits better performance in corrosion resistance and thermal conductivity than pure Ni. This study introduces an alternative strategy for the surface growth of BNNTs based on boron source design, which offers new possibilities for the controllable preparation of BNNTs for various applications.