Spectrophotometric Determination of Zirconium in Monazite Sand

A sensitive spectrophotometric method was developed for the determination of zirconium in monazite sand. The zirconium ion was previously separated from the other interfering elements by a 0.5 M thenoyltrifluoroacetone (TTA)-xylene extraction, then determined with Arsenazo III in 9 M HCl medium. Zirconium reacted with Arsenazo III to form an emeraled green coloured complex having maximum absorbance at 665 nm in 9 M HCl medium. The color was stable for at least 2 hours. Effects of time, HCl concentration, gelatine and various ions have been studied. The system confirms the Beer's law over the concentration range investigated. Optimum condition range for measurement in 1.0 cm quartz cell is 0.1–0.5 μg/ml of zirconium. The molar absorptivity is 1.51×10⁵ liter mole^?1 cm^?1. The metal-ligand ratio of 1:4 was confirmed by Job's Continuous Variation method and the conditional stability constant of Zirconium-Arsenazo III Complex in 4 M HCl and 9 M HCl were also determined by this method.     

Stereochemistry of the thermal isomerizations of (2S,3R-methoxymethyl-2,3-dideuterio-1-(dideuteriomethylene)cyclopropane

The (2S,3R) isomer of 2-methoxymethyl-2,3-dideuterio-1-(dideuteriomethylene)cyclopropane has been synthesized and heated at 198.8°: from the experimentally observed mol fractions of the eight isomers of 2,3,α,α,- and 2,3,3,α - tetradeuterio - 2 - methoxymethyl - 1 - methylenecyclopropane in the pyrolysis product mixture have been derived rate constants for seven distinct modes of isomerization. One-center thermal epimerizations at C(2) and C(3) and the C(2)C(3) two-center epimerization are of kinetic importance. Only two of four observable stereochemical modes for carbon [1,3] shifts are seen: there is inversion of stereochemistry at the migrating C atom, while the C(3)H trans to C(2)-CH₂OCH₃ in starting material becomes syn 4 : 1 C(α)-H in the [1,3] shift product. Stereomutation at C(2) does not occur along the reaction coordinate for [1,3] carbon shifts.     

碘掺杂的3-乙基-5-[2-(3-乙基-2苯并噻唑啉基)亚乙基]罗丹宁的结构与电性能

The merocyanine dye 3-ethyl-5-(2-(3-ethyl-2-benzothiazolinylidene)-ethylidene)-rhodanine (BTER) known as Agfa-10 has been found to have a good photoconductivity as solution cast film. In this paper iodine-doped BTER was obtained by doping with iodine vapor. Its structure was investigated with the following characteristies. 1 The doped iodine had been excited as I_3~- anion. 2 Because the electron located on the sulphur atom was transferred to iodine, the charge transfer complex of (BTER-I_3) formed. 3 During the iodine doping process, BTER changed from α-form to β-modification. These had been identified by X-ray diffraction, VIS-absorption spectra and SEM picture.4 From the volt-Ampere curve obtained from sandwich cell, when E≤2.2×10~(-1) V·cm~(-1), the room temperature electrical conductivity of BTER and BTER-I_3 were found to be 2.22×10~(-10) s·cm~(-1) and 2.6×10~(-7) S·cm~(-1), respectively.     

Software lens compensation applied to athermalization of infrared imaging systems

A different approach, aiming to achieve the constant blur status of point-spread function (PSF) at a certain defocused plane, is described. The correlation between the two PSF is used to control the PSF blur similarity, and simultaneously the Strehl ratio is also used to control the PSF blur minimization. By designing the PSF so that it is significantly insensitive to defocus or related defocus quantity, for example, due to temperature change, all the constantly blurred images can be accurately de-blurred by a simple inverse restoration filter for an adequate range of defocus. We refer to that as “software lens compensation” and apply a design method to solve the athermalization of middle wavelength infrared (MWIR) imaging systems. The resultant PSF is almost invariant in the temperature range from −10 to 50°C at the same focal plane. Consequently, the constant blur spot can be removed by a simple digital signal processing. Thus, clear and sharp de-blurred images at different temperatures are obtained.     

Bang-Bang Control Class D Amplifiers: Total Harmonic Distortion and Supply Noise

The total harmonic distortion (THD) and the power supply noise, qualified by the power supply rejection ratio (PSRR) and by the power supply induced intermodulation distortion (PS-IMD), are recognized to be potential drawbacks of class D amplifiers. In this paper, analytical expressions for the THD, PSRR, and PS-IMD of the bang-bang control class D amplifier (bang-bang amp) are derived; the bang-bang amp is arguably the most power-efficient class D amp for low-voltage power-critical applications including hearing aids. Based on the derived expressions, the effects of important parameters on the THD, PSRR, and PS-IMD are investigated, providing good insight to the design of the bang-bang amp to meet given design specifications. The analytical analyses are verified by comparing them against HSPICE simulations and hardware measurements. The bang-bang amp is also compared against the prevalent pulsewidth modulation class D amp, and in most cases, the former is shown to possess superior parameters, including lower power dissipation and hardware advantages for low-voltage power-critical applications.     

Plasmonic multilayer structure for ultrathin amorphous silicon film photovoltaic cell

A plasmonic multilayer structure (PMS) is proposed for photovoltaic cells with an ultrathin active layer that is 30 nm amorphous Si (α-Si). The optical properties of the PMS are analyzed by rigorous coupled-wave analysis (RCWA) and finite-difference time-domain (FDTD) method. Using the PMS, the incident light can be trapped into localized surface plasmon (LSP) and then the localized surface plasmon induces the surface plasmon (SP) that propagates transversely within the α-Si layer. Compared with the indium tin oxide (ITO)/α-Si/Ag structure, the photon number absorbed by PMS increase 28.7% while a normal incident transverse magnetic (TM) polarization wave is applied.     

Miniaturized Dual-Band Hybrid Couplers With Arbitrary Power Division Ratios

Branch-line and rat-race couplers are designed to have dual-band operation with arbitrary power division ratios. An elementary two-port is proposed to imitate the 90^deg section at the two designated frequencies with different characteristic impedances. The two-port consists of a stepped-impedance section with open stubs attached to its two ends, and its circuit parameters are determined by the transmission line theory. The use of the stepped-impedance sections also leads to circuit miniaturization. By the standard microstrip technology, investigated also includes the realizable power division ratios and circuit bandwidths in the two bands, the upper limit of the ratio of the two designated frequencies and the miniaturization factor of the proposed circuit. Hybrid couplers operating at 2.45/5.2 GHz with various power division ratios are designed, fabricated and tested. Experiment results are compared with the theory and simulation.     

Application-Aware Acceleration for Wireless Data Networks: Design Elements and Prototype Implementation

A tremendous amount of research has been done toward improving transport-layer performance over wireless data networks. The improved transport layer protocols are typically application-unaware. In this paper, we argue that the behavior of applications can and does dominate the actual performance experienced. More importantly, we show that for practical applications, application behavior all but completely negates any improvement achievable through better transport layer protocols. In this context, we motivate an application-aware, but application transparent, solution suite called A³ (application-aware acceleration) that uses a set of design principles realized in an application-specific fashion to overcome the typical behavioral problems of applications. We demonstrate the performance of A³ through both emulations using realistic application traffic traces and implementations using the NetFilter utility.     

Impact of preanneal process on threshold voltage of MOS transistors for trench DRAM

As the first step of DRAM manufacture, preanneal process plays an important role in determining the threshold voltage variation. It is found that the higher trans-1,2-dichloroethene flow in pad oxide growth and the higher nitrogen flow in high-temperature annealing step would respectively engender a lower boron segregation coefficient and higher nitridation of the oxide, both modify the boron distribution in the substrate and consequently the behavior of the threshold voltage. As the feature size of DRAM devices enter nanometer regime, besides gate oxidation, ion implantation and related thermal processes, the impact of preanneal process condition should be prudentially taken into consideration for rigorous control of the threshold voltage in the advanced DRAM production.