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11.
Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping ran affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance.  相似文献   
12.
The fine-structure fluorescence and fluorescence excitation spectra of conjugated chain compounds, namely, 2,5-bis(5-phenyl-1,3,4-oxadiazol-2-yl)furan (PDFDP) and 2,5-bis[5-(2,4-dimethylphenyl)-1,3,4-oxadiazol-2-yl]furan (XDFDX), were obtained by the Shpolskii method in an n-octane matrix at a temperature of 4.2 K. These spectra were simulated by representing the band of each of the vibronic transitions as the sum of a zero-phonon line and a phonon wing with the corresponding parameters, such as the half-widths of the spectral lines and the Debye-Waller factors. The results obtained made it possible to estimate the relative intensities of the vibronic transitions between the S 0 and S*1 states. The anharmonicity revealed in the conjugate spectra of fluorescence and fluorescence excitation of the PDFDP and XDFDX compounds was explained in terms of the interference of the Franck-Condon and Herzberg-Teller interactions occurring in the molecules under investigation. The influence of the substitution of the furan heterocycle (F) for the central benzene ring (P) in 1,4-bis-(5-phenyl-2-oxadiazolyl)benzene (PDPDP) on the parameters of the intramolecular interactions responsible for the formation of the vibronic spectra was considered.  相似文献   
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Minority carrier lifetime in long-wave infrared (LWIR) type?II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1?mW/cm2 to 2?mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.  相似文献   
15.
Transparent nanograined alumina has a great technological potential for highly demanding applications which take advantage of its superior mechanical properties like hardness, wear resistance, and strength, in addition to its optical performance in the infrared and visible domain. Accurate fracture properties (toughness) of this material are rather scarce in the quasi-static regime, and almost non-existent in the dynamic regime. Therefore, the present work investigates the static and dynamic fracture toughness of polycrystalline, nanograined alumina. The results show a marked increase in the dynamic initiation toughness when compared with the quasi-static regime, a phenomenon that was previously observed for other quasi-brittle materials. A combined fractographic and numerical study is carried out in order to identify the underlying mechanism(s) for the observed high dynamic initiation toughness. It is proposed that the latter results from the combined effect of a geometrical crack-front perturbation along with the contribution of the kinetic energy of the specimen. A discussion of the dynamic fracture toughness as a material property concludes this work.  相似文献   
16.
The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and stimulated emission are determined as functions of the current density j, with InGaAs/GaAs structures as an example. Under spontaneous-emission conditions, the carrier concentration in the active region of a laser structure grows as the current increases, while carrier heating is insignificant. The spontaneous-emission spectra calculated taking into account forbidden optical transitions agree well with the experimental ones. Under stimulated-emission conditions, the behavior is quite different. When the pump current density is comparatively low (several times above the threshold), the concentration of injected charge carriers levels off and does not grow as the current increases, while the carrier temperature rises considerably. When the current density exceeds the threshold value by orders of magnitude, stabilization of the charge-carrier concentration does not take place; the carrier concentration exhibits a severalfold increase and the carrier temperature rises to about 450 K at j = 80 kA/cm2. The number of the charge carriers escaping from the quantum wells into the barriers, which determines the laser efficiency, also increases under these conditions because of the carrier heating. This undesirable effect can be weakened by increasing the depth of the quantum wells.  相似文献   
17.
We demonstrate that the SPECIFIC CP technique can be used to obtain heteronuclear correlation (HETCOR) spectra of peptide backbones with greater efficiency than conventional HETCOR methods. We show that similar design principles can be employed to achieve selective homonuclear polarization transfer mediated through dipolar or scalar couplings. Both approaches are demonstrated in a tripeptide with uniform 15N and 13C labeling, and with uniform 15N labeling and natural abundance 13C. In other applications, the high efficiency of the heteronuclear SPECIFIC CP transfer allows discrimination of single amide signals in the 248-residue membrane protein bacteriorhodopsin (bR). In particular, variations are detected in the ordering of the Ala81-Arg82 peptide bond among the photocycle intermediates of bR and SPECIFIC CP is used to correlate 15N and 13C signals from the three Val-Pro peptide bonds.  相似文献   
18.
From investigations with ship models tested in steep periodic following waves, it has been conjectured in the past that, if the speed is observed reaching (in transient) the celerity value, attraction toward the condition commonly identified as “surf-riding” is already in progress. The nonlinear dynamics of this phenomenon has been investigated in depth also theoretically; however, it is unknown whether the stated simple phenomenological detection rule is meaningful also for more natural sea wave profiles. A practical question that prompted the current investigation is whether the duration of attraction to surf-riding could be properly quantified as a percentage of the total time of exposure to a specified wave environment, so that a probability of surf-riding could be eventually calculated. Celerity is defined in the current work as the velocity of propagation of a suitable local property of the wave profile, such as a certain value of slope. For irregular seas, this leads to the concept of instantaneous celerity. Unfortunately, instantaneous celerity, in general, is not a smooth and bounded curve in time. An alternative definition of celerity fitting to the problem of surf-riding is thus investigated, where the propagated points of the profiles are those with the locally maximum slope. Simultaneous treatment of the “wave” and “ship” processes is implemented, and the potential of a condition based on local celerity for surf-riding prediction is examined. Various patterns of behavior before and into surf-riding are observed and discussed. The paper is a step in the direction of developing a probabilistic method of assessment for the dangerous phenomenon of surf-riding and indirectly, for the evaluation of the class of cross-disciplinary phenomena that obey similar nonlinear dynamics.  相似文献   
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20.
High-power 2.3-/spl mu/m In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-/spl mu/m-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 /spl mu/s/300 Hz) at a heatsink temperature of 18/spl deg/C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.  相似文献   
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